IRF1607PbF Typical Applications HEXFET Power MOSFET Industrial Motor Drive D V = 75V DSS Benefits Ultra Low On-Resistance R = 0.0075 Dynamic dv/dt Rating DS(on) G 175C Operating Temperature Fast Switching I = 142A D S Repetitive Avalanche Allowed up to Tjmax Lead-Free Description This Stripe Planar design of HEXFET Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. TO-220AB Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 142 D C GS I T = 100C Continuous Drain Current, V 10V 100 A D C GS I Pulsed Drain Current 570 DM P T = 25C Power Dissipation 380 W D C Linear Derating Factor 2.5 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy 1250 mJ AS I Avalanche Current See Fig.12a, 12b, 15, 16 A AR E Repetitive Avalanche Energy mJ AR dv/dt Peak Diode Recovery dv/dt 5.2 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range STG C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting Torque, 6-32 or M3 screw 10 lbfin (1.1Nm) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 0.40 JC R Case-to-Sink, Flat, Greased Surface 0.50 C/W CS R Junction-to-Ambient 62 JA www.irf.com 1 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 75 V V = 0V, I = 250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.086 V/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 0.00580.0075 V = 10V, I = 85A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = 10V, I = 250A GS(th) DS D g Forward Transconductance 79 S V = 25V, I = 85A fs DS D 20 V = 75V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 60V, V = 0V, T = 150C DS GS J Gate-to-Source Forward Leakage 200 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -200 V = -20V GS Q Total Gate Charge 210 320 I = 85A g D Q Gate-to-Source Charge 45 68 nC V = 60V gs DS Q Gate-to-Drain Mille) Charge 73 110 V = 10V gd GS t Turn-On Delay Time 22 V = 38V d(on) DD t Rise Time 130 I = 85A r D ns t Turn-Off Delay Time 84 R = 1.8 d(off) G t Fall Time 86 V = 10V f GS D Between lead, L Internal Drain Inductance 4.5 D 6mm (0.25in.) nH G from package L Internal Source Inductance 7.5 S and center of die contact S C Input Capacitance 7750 V = 0V iss GS C Output Capacitance 1230 pF V = 25V oss DS C Reverse Transfer Capacitance 310 = 1.0MHz, See Fig. 5 rss C Output Capacitance 5770 V = 0V, V = 1.0V, = 1.0MHz oss GS DS C Output Capacitance 790 V = 0V, V = 60V, = 1.0MHz oss GS DS C eff. Effective Output Capacitance 1420 V = 0V, V = 0V to 60V oss GS DS Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 142 (Body Diode) showing the G I Pulsed Source Current integral reverse SM 570 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 85A, V = 0V SD J S GS t Reverse Recovery Time 130 200 ns T = 25C, I = 85A rr J F Q Reverse RecoveryCharge 690 1040 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D Repetitive rating pulse width limited by C eff. is a fixed capacitance that gives the same charging time oss max. junction temperature. (See fig. 11). as C while V is rising from 0 to 80% V . oss DS DSS Starting T = 25C, L = 0.21mH J Calculated continuous current based on maximum allowable R = 25 , I = 85A, V =10V (See Figure 12). G AS GS junction temperature. Package limitation current is 75A. I 85A, di/dt 310A/s, V V , SD DD (BR)DSS Limited by T , see Fig.12a, 12b, 15, 16 for typical repetitive Jmax T 175C J avalanche performance. Pulse width 400s duty cycle 2%. 2 www.irf.com