PD - 97031D IRF2907ZS-7PPbF Features Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance D 175C Operating Temperature V = 75V DSS Fast Switching Repetitive Avalanche Allowed up to Tjmax R = 3.8m G DS(on) Description S I = 160A D This HEXFET Power MOSFET utilizes the latest processing techniques and advanced packaging technology to achieve extremely low on-resistance and world -class current ratings. Additional features of this design are a 175C junction operating tem- perature, fast switching speed and improved repeti- tive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Server & Telecom OR ing and low voltage Motor Drive Applications. Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 180 A D C GS I T = 100C Continuous Drain Current, V 10V (See Fig. 9) 120 D C GS I T = 25C (Package Limited) 160 C Continuous Drain Current, V 10V D GS I 700 DM Pulsed Drain Current P T = 25C 300 W D C Maximum Power Dissipation Linear Derating Factor 2.0 W/C V Gate-to-Source Voltage 20 V GS E AS 160 mJ Single Pulse Avalanche Energy (Thermally Limited) E (tested) AS Single Pulse Avalanche Energy Tested Value 410 I AR See Fig.12a,12b,15,16 A Avalanche Current E AR mJ Repetitive Avalanche Energy T -55 to + 175 C Operating Junction and J T STG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 screw 10 lbfin (1.1Nm) Thermal Resistance Parameter Typ. Max. Units R JC 0.50 C/W Junction-to-Case R CS 0.50 Case-to-Sink, Flat, Greased Surface R 62 JA Junction-to-Ambient R JA 40 Junction-to-Ambient (PCB Mount, steady state) HEXFET is a registered trademark of International Rectifier. www.irf.com 1 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage75 V V = 0V, I = 250A GS D V / T Breakdown Voltage Temp. Coefficient 0.066 V/C Reference to 25C, I = 1mA DSS J D R SMD DS(on) Static Drain-to-Source On-Resistance V = 10V, I = 110A 3.0 3.8 m GS D V GS(th) Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A DS GS D gfs 94 S V = 25V, I = 110A Forward Transconductance DS D I DSS Drain-to-Source Leakage Current 20 A V = 75V, V = 0V DS GS 250 V = 75V, V = 0V, T = 125C DS GS J I GSS Gate-to-Source Forward Leakage 200 nA V = 20V GS Gate-to-Source Reverse Leakage -200 V = -20V GS Q Total Gate Charge 170260nC I = 110A g D Q gs Gate-to-Source Charge 55 V = 60V DS Q gd Gate-to-Drain Mille) Charge 66 V = 10V GS t Turn-On Delay Time 21 ns V = 38V d(on) DD t r Rise Time 90 I = 110A D t Turn-Off Delay Time 92 R = 2.6 d(off) G t f Fall Time 44 V = 10V GS D L D Internal Drain Inductance 4.5 nH Between lead, 6mm (0.25in.) G L Internal Source Inductance 7.5 from package S S and center of die contact C Input Capacitance 7580 pF V = 0V iss GS C oss Output Capacitance 970 V = 25V DS C rss Reverse Transfer Capacitance 540 = 1.0MHz, See Fig. 5 C Output Capacitance 3750 V = 0V, V = 1.0V, = 1.0MHz oss GS DS C oss Output Capacitance 650 V = 0V, V = 60V, = 1.0MHz GS DS C eff. oss Effective Output Capacitance 1110 V = 0V, V = 0V to 60V GS DS Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I S Continuous Source Current 160 MOSFET symbol (Body Diode) A showing the I G SM Pulsed Source Current 700 integral reverse S (Body Diode) p-n junction diode. V Diode Forward Voltage T = 25C, I = 110A, V = 0V SD 1.3 V J S GS t Reverse Recovery Time T = 25C, I = 110A, V = 38V rr 3553ns J F DD Q di/dt = 100A/s rr Reverse Recovery Charge 40 60 nC Repetitive rating pulse width limited by Limited by T , see Fig.12a, 12b, 15, 16 for typical repetitive Jmax max. junction temperature. (See fig. 11). avalanche performance. Limited by T , starting T = 25C, Jmax J This value determined from sample failure population. 100% L=0.026mH, R = 25 , I = 110A, V =10V. GS G AS tested to this value in production. Part not recommended for use above this value. 2 This is applied to D Pak, when mounted on 1 square PCB Pulse width 1.0ms duty cycle 2%. ( FR-4 or G-10 Material ). For recommended footprint and C eff. is a fixed capacitance that gives the same oss soldering techniques refer to application note AN-994. charging time as C while V is rising from 0 to 80% oss DS R is measured at T of approximately 90C. J V . DSS 2 www.irf.com