PD - 95758A IRF3305PbF Features HEXFET Power MOSFET D V = 55V DSS R = 8.0m DS(on) G I = 75A D S Description %& & ( ) & * + ) , -) . , / , + 0 1 , 2/3 451 TO-220AB Absolute Maximum Ratings Parameter Max. Units Continuous Drain Current, V 10V (Silicon Limited) I T = 25C GS 140 D C I T = 100C Continuous Drain Current, V 10V GS 99 A D C Continuous Drain Current, V 10V (Package Limited) I T = 25C 75 GS D C Pulsed Drain Current I 560 DM P T = 25C Power Dissipation 330 W D C Linear Derating Factor 2.2 W/C V Gate-to-Source Voltage 20 V GS Single Pulse Avalanche Energy E 470 mJ AS (Thermally limited) Single Pulse Avalanche Energy Tested Value E (Tested ) 860 AS Avalanche Current I See Fig.12a, 12b, 15, 16 A AR Repetitive Avalanche Energy E mJ AR T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting Torque, 6-32 or M3 screw 10 lbf in (1.1N m) Thermal Resistance Parameter Typ. Max. Units Junction-to-Case R 0.45 JC R Case-to-Sink, Flat, Greased Surface 0.50 C/W CS Junction-to-Ambient R 62 JA www.irf.com 1 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 55 V V = 0V, I = 250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.055 V/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 8.0 m V = 10V, I = 75A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D gfs Forward Transconductance 41 S V = 25V, I = 75A DS D I Drain-to-Source Leakage Current 25 A V = 55V, V = 0V DSS DS GS 250 V = 55V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 200 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -200 V = -20V GS Q Total Gate Charge 100 150 I = 75A g D Q Gate-to-Source Charge 21 nC V = 44V gs DS Q Gate-to-Drain Mille) Charge 45 V = 10V gd GS t Turn-On Delay Time 16 V = 28V d(on) DD t Rise Time 88 I = 75A r D t Turn-Off Delay Time 43 ns R = 2.6 d(off) G t Fall Time 34 V = 10V f GS L Internal Drain Inductance 4.5 Between lead, D nH 6mm (0.25in.) L Internal Source Inductance 7.5 from package S and center of die contact C Input Capacitance 3650 V = 0V iss GS C Output Capacitance 1230 V = 25V oss DS C Reverse Transfer Capacitance 450 pF = 1.0MHz rss C Output Capacitance 4720 V = 0V, V = 1.0V, = 1.0MHz oss GS DS C Output Capacitance 930 V = 0V, V = 44V, = 1.0MHz oss GS DS C eff. Effective Output Capacitance 1490 V = 0V, V = 0V to 44V oss GS DS Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current 75 MOSFET symbol S (Body Diode) A showing the I Pulsed Source Current 560 integral reverse SM (Body Diode) p-n junction diode. V Diode Forward Voltage1.3V T = 25C, I = 75A, V = 0V SD J S GS t Reverse Recovery Time 5786ns T = 25C, I = 75A, V = 28V rr J F DD di/dt = 100A/s Q Reverse Recovery Charge 130 190 nC rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Repetitive rating pulse width limited by C eff. is a fixed capacitance that gives the same charging time oss max. junction temperature. (See fig. 11). as C while V is rising from 0 to 80% V . oss DS DSS Limited by T , starting T = 25C, L = 0.17mH Jmax J Limited by T , see Fig.12a, 12b, 15, 16 for typical repetitive Jmax R = 25 , I = 75A, V =10V. Part not G AS GS avalanche performance. recommended for use above this value. This value determined from sample failure population. 100% Pulse width 1.0ms duty cycle 2%. tested to this value in production. C eff. is a fixed capacitance that gives the oss R is measured at T of approximately 90C. J same charging time as C while V is rising oss DS from 0 to 80% V . DSS 2 www.irf.com