HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance V = 100V DSS Dynamic dv/dt Rating 175C Operating Temperature R = 23m Fast Switching DS(on) G Fully Avalanche Rated Lead-Free I = 57A D S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. 2 2 The D Pak is a surface mount power package capable of accommodating die D Pak TO-262 sizes up to HEX-4. It provides the highest power capability and the lowest IRF3710SPbF IRF3710LPbF 2 possible on-resistance in any existing surface mount package. The D Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF3710L) is available for low-profile applications. Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 57 D C GS I T = 100C Continuous Drain Current, V 10V 40 A D C GS I Pulsed Drain Current 180 DM P T = 25C Power Dissipation 200 W D C Linear Derating Factor 1.3 W/C V Gate-to-Source Voltage 20 V GS I Avalanche Current 28 A AR E Repetitive Avalanche Energy 20 mJ AR dv/dt Peak Diode Recovery dv/dt 5.8 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range STG C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 0.75 C/W JC R Junction-to-Ambient (PCB Mounted,steady-state)** 40 JA IRF3710S/LPbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 100 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.13 V/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 23 m V = 10V, I =28A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D g Forward Transconductance 32 S V = 25V, I = 28A fs DS D 25 V = 100V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 80V, V = 0V, T = 150C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS Q Total Gate Charge 130 I = 28A g D Q Gate-to-Source Charge 26 nC V = 80V gs DS Q Gate-to-Drain Mille) Charge 43 V = 10V, See Fig. 6 and 13 gd GS t Turn-On Delay Time 12 V = 50V d(on) DD t Rise Time 58 I = 28A r D ns t Turn-Off Delay Time 45 R = 2.5 d(off) G t Fall Time 47 V = 10V, See Fig. 10 f GS D Between lead, L Internal Drain Inductance 4.5 D 6mm (0.25in.) nH G from package L Internal Source Inductance 7.5 S and center of die contact S C Input Capacitance 3130 V = 0V iss GS C Output Capacitance 410 V = 25V oss DS C Reverse Transfer Capacitance 72 pF = 1.0MHz, See Fig. 5 rss E Single Pulse Avalanche Energy 1060 280 mJ I = 28A, L = 0.70mH AS AS Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 57 (Body Diode) showing the G I Pulsed Source Current integral reverse SM 230 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.2 V T = 25C, I = 28A, V = 0V SD J S GS t Reverse Recovery Time 140 220 ns T = 25C, I = 28A rr J F Q Reverse Recovery Charge 670 1010 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D Repetitive rating pulse width limited by This is a typical value at device destruction and represents max. junction temperature. (See fig. 11). operation outside rated limits. Starting T = 25C, L = 0.70mH, R = 25, This is a calculated value limited to T = 175C . J G J I = 28A, V =10V. (See Figure 12). AS GS Uses IRF3710 data and test conditions. 28A di/d 380A/s, V V , DD (BR)DSS **When mounted on 1 square PCB (FR-4 or G-10 Material). For T 175C. J recommended footprint and soldering techniques refer to application Pulse width 400s duty cycle 2%. note AN-994.