SMPS MOSFET IRF6216PbF HEXFET Power MOSFET Applications V R max I DSS DS(on) D Reset Switch for Active Clamp Reset DC-DC converters -150V 0.240 V =-10V -2.2A GS Lead-Free Benefits Low Gate to Drain Charge to Reduce A 1 8 S D Switching Losses 2 7 D S Fully Characterized Capacitance Including 3 Effective C to Simplify Design (See 6 OSS S D App. Note AN1001) 4 5 G D Fully Characterized Avalanche Voltage and Current SO-8 Top View Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V -2.2 D A GS I T = 70C Continuous Drain Current, V 10V -1.9 A D A GS I Pulsed Drain Current -19 DM P T = 25C Power Dissipation 2.5 W D A Linear Derating Factor 0.02 W/C V Gate-to-Source Voltage 20 V GS dv/dt Peak Diode Recovery dv/dt 7.8 V/ns T Operating Junction and -55 to + 150 J T Storage Temperature Range STG C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Drain Lead 20 JL R Junction-to-Ambient 50 C/W JA Notes through are on page 8 www.irf.com 1 06/06/05IRF6216PbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage -150 V V = 0V, I = -250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient -0.17 V/C Reference to 25C, I = -1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 0.240 V = -10V, I = -1.3A DS(on) GS D V Gate Threshold Voltage -3.0 -5.0 V V = V , I = -250A GS(th) DS GS D -25 V = -150V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS -250 V = -120V, V = 0V, T = 125C DS GS J Gate-to-Source Forward Leakage -100 V = -20V GS nA I GSS Gate-to-Source Reverse Leakage 100 V = 20V GS Dynamic T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions g Forward Transconductance 2.7 S V = -50V, I = -1.3A fs DS D Q Total Gate Charge 33 49 I = -1.3A g D Q Gate-to-Source Charge 7.2 11 nC V = -120V gs DS Q Gate-to-Drain Mille) Charge 15 23 V = -10V, gd GS t Turn-On Delay Time 18 V = -75V d(on) DD t Rise Time 15 I = -1.3A r D ns t Turn-Off Delay Time 33 R = 6.5 d(off) G t Fall Time 26 V = -10V f GS C Input Capacitance 1280 V = 0V iss GS C Output Capacitance 220 V = -25V oss DS C Reverse Transfer Capacitance 53 pF = 1.0MHz rss C Output Capacitance 1290 V = 0V, V = -1.0V, = 1.0MHz oss GS DS C Output Capacitance 99 V = 0V, V = -120V, = 1.0MHz oss GS DS C eff. Effective Output Capacitance 220 V = 0V, V = 0V to -120V oss GS DS Avalanche Characteristics Parameter Typ. Max. Units E Single Pulse Avalanche Energy 200 mJ AS I Avalanche Current -4.0 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S -2.2 (Body Diode) showing the G I Pulsed Source Current integral reverse SM -19 (Body Diode) p-n junction diode. S V Diode Forward Voltage -1.6 V T = 25C, I = -1.3A, V = 0V SD J S GS t Reverse Recovery Time 80 120 nS T = 25C, I = -1.3A rr J F Q Reverse RecoveryCharge 310 460 nC di/dt = -100A/s rr 2 www.irf.com