IRF6637PbF IRF6637TRPbF DirectFET Power MOSFET RoHS Compliant V V R R DSS GS DS(on) DS(on) Lead-Free (Qualified up to 260C Reflow) 30V max 20V max 5.7m 10V 8.2m 4.5V Application Specific MOSFETs Q Q Q Q Q V Ideal for CPU Core DC-DC Converters g tot gd gs2 rr oss gs(th) Low Conduction Losses and Switching Losses 11nC 4.0nC 1.0nC 20nC 9.9nC 1.8V Low Profile (<0.7mm) Dual Sided Cooling Compatible Compatible with existing Surface Mount Techniques DirectFET ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT MP Description TM The IRF6637PbF combines the latest HEXFET power MOSFET silicon technology with advanced DirectFET packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering tech- niques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6637PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6637PbF has been optimized for parameters that are critical in synchronous buck operating from 12 volt bus converters including R and gate charge to minimize losses in the control FET socket. DS(on) Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 30 V DS V Gate-to-Source Voltage 20 GS 14 I T = 25C Continuous Drain Current, V 10V GS D A Continuous Drain Current, V 10V 11 I T = 70C A A GS D I T = 25C Continuous Drain Current, V 10V 59 D C GS I Pulsed Drain Current 110 DM E 31 Single Pulse Avalanche Energy mJ AS I 11 Avalanche Current A AR 25 12 I = 14A I = 11A V = 24V D D DS 10 VDS= 15V 20 8 15 6 T = 125C J 4 10 2 T = 25C J 5 0 2.0 4.0 6.0 8.0 10.0 0 4 8 1216 2024 V , Gate-to-Source Voltage (V) GS Q Total Gate Charge (nC) G Fig 1. Typical On-Resistance Vs. Gate Voltage Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage T measured with thermocouple mounted to top (Drain) of part. Click on this section to link to the appropriate technical paper. C Repetitive rating pulse width limited by max. junction temperature. Click on this section to link to the DirectFET Website. Starting T = 25C, L = 0.52mH, R = 25, I = 11A. Surface mounted on 1 in. square Cu board, steady state. J G AS www.irf.com 1 5/5/06 T m ypical R (on) ( ) D S V , Gate-to-Source Voltage (V) GS Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV V = 0V, I = 250A Drain-to-Source Breakdown Voltage 30 V GS D DSS Reference to 25C, I = 1mA V /T Breakdown Voltage Temp. Coefficient 26 mV/C D DSS J V = 10V, I = 14A R Static Drain-to-Source On-Resistance 5.7 7.7 m GS D DS(on) V = 4.5V, I = 11A 8.2 10.8 GS D V = V , I = 250A V Gate Threshold Voltage 1.35 1.8 2.35 V GS(th) DS GS D V /T Gate Threshold Voltage Coefficient -5.4 mV/C GS(th) J I V = 24V, V = 0V Drain-to-Source Leakage Current 1.0 A DSS DS GS V = 24V, V = 0V, T = 125C 150 DS GS J I V = 20V Gate-to-Source Forward Leakage 100 nA GS GSS V = -20V Gate-to-Source Reverse Leakage -100 GS V = 15V, I = 11A gfs Forward Transconductance 38 S DS D Q Total Gate Charge 11 17 g V = 15V Q Pre-Vth Gate-to-Source Charge 3.1 gs1 DS Q V = 4.5V Post-Vth Gate-to-Source Charge 1.0 nC gs2 GS Q I = 11A Gate-to-Drain Charge 4.0 6.0 gd D Q Gate Charge Overdrive 2.9 See Fig. 15 godr Q Switch Charge (Q + Q ) 5.0 sw gs2 gd Q Output Charge 9.9 nC V = 16V, V = 0V DS GS oss R Gate Resistance 1.2 G V = 16V, V = 4.5V t Turn-On Delay Time 12 DD GS d(on) I = 11A t Rise Time 15 r D t Turn-Off Delay Time 14 ns Clamped Inductive Load d(off) t Fall Time 3.8 f C V = 0V Input Capacitance 1330 iss GS C V = 15V Output Capacitance 430 pF DS oss C = 1.0MHz Reverse Transfer Capacitance 150 rss Diode Characteristics Parameter Min. Typ. Max. Units Conditions I MOSFET symbol Continuous Source Current 53 S (Body Diode) A showing the I Pulsed Source Current 110 integral reverse SM (Body Diode) p-n junction diode. T = 25C, I = 11A, V = 0V V Diode Forward Voltage 1.0 V SD J S GS T = 25C, I = 11A t Reverse Recovery Time 13 20 ns rr J F Q di/dt = 500A/s Reverse Recovery Charge 20 30 nC rr Repetitive rating pulse width limited by max. junction temperature. Pulse width 400s duty cycle 2%. 2 www.irf.com