IRF6892STRPbF IRF6892STR1PbF DirectFET MOSFET with Schottky Diode RoHS Compliant and Halogen Free Low Profile (<0.7 mm) V V R R DSS GS DS(on) DS(on) Dual Sided Cooling Compatible Ultra Low Package Inductance 25V max 16V max 1.3m 10V 2.0m 4.5V Optimized for High Frequency Switching Q Q Q Q Q V g tot gd gs2 rr oss gs(th) Ideal for CPU Core DC-DC Converters Optimized for Control FET Application 17nC 6.0nC 2.3nC 39nC 16nC 1.8V Compatible with existing Surface Mount Techniques 100% Rg tested G S D D S S ISOMETRIC Applicable DirectFET Outline and Substrate Outline S1 S2 S3C M2 M4 L4 L6 L8 Description TM The IRF6892SPbF combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and less than 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6892SPbF balances industry leading on-state resistance while minimizing gate charge along with low gate resistance to reduce both conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further reducing the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC converters that power high current loads such as the latest generation of microprocessors. The IRF6892SPbF has been optimized for parameters that are critical in synchronous buck converters Sync FET sockets. Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 25 DS V Gate-to-Source Voltage 16 V GS Continuous Drain Current, V 10V 28 I T = 25C GS D A Continuous Drain Current, V 10V 22 I T = 70C GS D A A Continuous Drain Current, V 10V 125 I T = 25C GS D C Pulsed Drain Current 220 I DM E Single Pulse Avalanche Energy 240 mJ AS I Avalanche Current 22 A AR 8.0 14.0 I = 28A I = 22A D D 12.0 V = 20V DS 6.0 V = 13V 10.0 DS VDS= 5V 8.0 4.0 6.0 T = 125C J 4.0 2.0 2.0 T = 25C J 0.0 0.0 2 4 6 8 10 12 14 16 0 10 20 304050 Q Total Gate Charge (nC) V Gate -to -Source Voltage (V) G GS, Fig 1. Typical On-Resistance vs. Gate Voltage Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage Click on this section to link to the appropriate technical paper. T measured with thermocouple mounted to top (Drain) of part. C Repetitive rating pulse width limited by max. junction temperature. Click on this section to link to the DirectFET Website. Starting T = 25C, L = 1.2mH, R = 25, I = 22A. Surface mounted on 1 in. square Cu board, steady state. J G AS www.irf.com 1 4/4/12 Typical R (m) DS(on) V , Gate-to-Sourc e Voltage (V) GS Static T = 25C (unless otherwise specified) J Conditions Parameter Min. Typ. Max. Units BV V = 0V, I = 1mA Drain-to-Source Breakdown Voltage 25 V GS D DSS Reference to 25C, I = 5mA V /T Breakdown Voltage Temp. Coefficient 11 mV/C D DSS J R V = 10V, I = 28A Static Drain-to-Source On-Resistance 1.3 1.7 DS(on) GS D m V = 4.5V, I = 22A 2.0 2.6 GS D V Gate Threshold Voltage 1.1 1.8 2.1 V GS(th) V = V , I = 50 A DS GS D V / T Gate Threshold Voltage Coefficient -9.8 mV/C GS(th) J I V = 20V, V = 0V Drain-to-Source Leakage Current 500 A DS GS DSS V = 20V, V = 0V, T = 125C 5.0 mA DS GS J I V = 16V Gate-to-Source Forward Leakage 100 GSS GS nA V = -16V Gate-to-Source Reverse Leakage -100 GS V = 13V, I = 22A gfs Forward Transconductance 290 S DS D Q Total Gate Charge 17 25 g Q V = 13V Pre-Vth Gate-to-Source Charge 4.0 gs1 DS Q V = 4.5V Post-Vth Gate-to-Source Charge 2.3 gs2 GS nC Q I = 22A Gate-to-Drain Charge 6.0 gd D Q Gate Charge Overdrive 4.7 See Fig. 2 & 15 godr Q Switch Charge (Q + Q ) 8.3 sw gs2 gd Q V = 10V, V = 0V Output Charge 16 nC oss DS GS R Gate Resistance 0.4 G t V = 13V, V = 4.5V Turn-On Delay Time 12 d(on) DD GS t I = 22A Rise Time 30 r D ns t R = 1.8 Turn-Off Delay Time 16 d(off) G t Fall Time 9.5 f C V = 0V Input Capacitance 2510 iss GS V = 13V C Output Capacitance 850 pF oss DS C = 1.0MHz Reverse Transfer Capacitance 190 rss Diode Characteristics Conditions Parameter Min. Typ. Max. Units I MOSFET symbol D Continuous Source Current S 76 showing the (Body Diode) A G I integral reverse Pulsed Source Current SM 220 S p-n junction diode. (Body Diode) V T = 25C, I = 22A, V = 0V Diode Forward Voltage 0.75 V SD J S GS t T = 25C, I = 22A Reverse Recovery Time 22 33 ns rr J F Q di/dt = 300A/s Reverse Recovery Charge 37 56 nC rr Repetitive rating pulse width limited by max. junction temperature. Pulse width 400s duty cycle 2%. 2 www.irf.com