X-On Electronics has gained recognition as a prominent supplier of IRF7317PBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRF7317PBF MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRF7317PBF Infineon

Name: IRF7317PBF
Brand: Infineon
SKU: IRF7317PBF_Infineon
Availability: OutOfStock
Rating: 5 (11 reviews)

IRF7317PBF electronic component of Infineon

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See Product Specifications

Part No.	IRF7317PBF
Manufacturer:	Infineon
Category:	MOSFETs
Description:	Transistor: N/P-MOSFET; unipolar; 20/-20V; 6.6/-5.3A; 2W; SO8
Datasheet:	IRF7317PBF Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

N/A

Obsolete

IRF7317PBF More Buying Options & Price Grid(s)

Availability	Price	Quantity
0 MOQ : 25 Multiples : 25	25 : USD 0.6678 300 : USD 0.6224 1250 : USD 0.5706	N/A Obsolete

0 MOQ : 25 Multiples : 25	25 : USD 0.6071 300 : USD 0.5658 1250 : USD 0.5187	N/A Obsolete

0 Multiples : 3800		N/A Obsolete

0 MOQ : 1 Multiples : 1	1 : USD 1.3735 10 : USD 1.1797 100 : USD 0.9062 500 : USD 0.801 1000 : USD 0.6328	N/A Obsolete

0 MOQ : 1 Multiples : 1	1 : USD 2.5834 5 : USD 1.8117 9 : USD 1.2078 69 : USD 0.5133	N/A Obsolete

We are delighted to provide the IRF7317PBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRF7317PBF and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The IRF7317PBF is a N-Channel HEXFET power MOSFET produced by Infineon Technologies. The device is designed for use in general purpose and automotive applications. The IRF7317PBF has a breakdown voltage of 20V and a maximum drain current of 63A. The device has standard temperature ratings and is rated for a maximum operating temperature of 175°C. This device is RoHS compliant and provides superior performance and reliability in a wide range of applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

CYP may also be referenced as

Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION

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Manufacturer Infineon Infineon
Product Category MOSFETs MOSFETs
RoHS - XON Y Y
Id - Continuous Drain Current 6.6 A 6.6 A
Vds - Drain-Source Breakdown Voltage 20 V 20 V
Rds On - Drain-Source Resistance 29 mOhms 29 mOhms
Transistor Polarity N And P - Channel N And P - Channel
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Pd - Power Dissipation 2 W 2 W
Mounting Style Smd/Smt Smd/Smt
Package / Case SOIC - 8 SOIC - 8
Packaging Tube Tube
Technology Si Si
Number of Channels 2 Channel 2 Channel
Vgs - Gate-Source Voltage 12 V 12 V
Qg - Gate Charge 18 nC 18 nC
Channel Mode Enhancement Enhancement
Configuration Dual Dual Drain Dual Dual Drain
Brand Infineon Infineon
Continuous Drain Current 6.6 A 6.6 A
Drain-Source Breakdown Voltage 20 V 20 V
Gate-Source Breakdown Voltage 12 V 12 V
Power Dissipation 2 W 2 W
Rds On 29 Mohms 29 Mohms
Fall Time 31 ns , 49 ns 31 ns , 49 ns
Gate Charge Qg 18 nC 18 nC
Rise Time 17 ns , 40 ns 17 ns , 40 ns
Factory Pack Quantity : 95 95
Typical Turn-Off Delay Time 38 ns , 42 ns 38 ns , 42 ns
Height 1.75 mm 1.75 mm
Length 4.9 mm 4.9 mm
Transistor Type 1 N - Channel, 1 P - Channel 1 N - Channel, 1 P - Channel
Type Power Mosfet Power Mosfet
Width 3.9 mm 3.9 mm
Cnhts 8541210000 8541210000
Hts Code 8541290095 8541290095
Mxhts 85412999 85412999
Product Type Mosfet Mosfet
Subcategory Mosfets Mosfets