X-On Electronics has gained recognition as a prominent supplier of IRF7342TRPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRF7342TRPBF MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRF7342TRPBF Infineon

Hot IRF7342TRPBF electronic component of Infineon
IRF7342TRPBF Infineon
IRF7342TRPBF MOSFETs
IRF7342TRPBF  Semiconductors

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See Product Specifications
Part No. IRF7342TRPBF
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET 2 P Channel (Dual) 55V 3.4A 1V @ 250uA 105 mΩ @ 3.4A,10V SOIC-8_150mil RoHS
Datasheet: IRF7342TRPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.046 ea
Line Total: USD 1.05 
Availability - 4967
Ship by Tue. 24 Jun to Fri. 27 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3880
Ship by Tue. 17 Jun to Mon. 23 Jun
MOQ : 4000
Multiples : 4000
4000 : USD 0.4687
8000 : USD 0.4562

4967
Ship by Tue. 24 Jun to Fri. 27 Jun
MOQ : 1
Multiples : 1
1 : USD 1.046
10 : USD 0.8506
30 : USD 0.5657
100 : USD 0.4441
500 : USD 0.3549
1000 : USD 0.3345

22864
Ship by Fri. 13 Jun to Tue. 17 Jun
MOQ : 1
Multiples : 1
1 : USD 1.5625
10 : USD 1.008
25 : USD 0.9626
100 : USD 0.6842
250 : USD 0.6457
500 : USD 0.5863
1000 : USD 0.5445
2000 : USD 0.5401
4000 : USD 0.5005

10447
Ship by Fri. 13 Jun to Tue. 17 Jun
MOQ : 1
Multiples : 1
1 : USD 1.47
10 : USD 1.0556
38 : USD 0.5012
103 : USD 0.4732
4000 : USD 0.462

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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We are delighted to provide the IRF7342TRPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRF7342TRPBF and other electronic components in the MOSFETs category and beyond.

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The IRF7342TRPBF is a dual p-channel MOSFET manufactured by Infineon. It is a surface mount device, with a lead pitch of 150 mil, and is RoHS compliant. The device has a breakdown voltage of 55V, a continuous drain current of 3.4A, a gate-source voltage of 1V and a RDSon of 105mO at 3.4A of drain-source voltage and 10V of gate-source voltage. It also features a very low gate threshold current of 250uA for on-state switching operation.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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