IRF7492PbF HEXFET Power MOSFET V R max I Applications DSS DS(on) D High frequency DC-DC converters 200V 79m V = 10V 3.7A GS Lead-Free Benefits A A Low Gate to Drain Charge to Reduce 1 8 S D Switching Losses 2 7 S D Fully Characterized Capacitance Including 3 6 S D Effective C to Simplify Design, (See OSS App. Note AN1001) 4 5 G D Fully Characterized Avalanche Voltage SO-8 and Current Top View Absolute Maximum Ratings Parameter Max. Units V Drain-Source Voltage 200 V DS V Gate-to-Source Voltage 20 V GS I T = 25C Continuous Drain Current, V 10V 3.7 D A GS I T = 70C Continuous Drain Current, V 10V 3.0 A D A GS I Pulsed Drain Current 30 DM P T = 25C Power Dissipation 2.5 W D A Linear Derating Factor 0.02 W/C dv/dt Peak Diode Recovery dv/dt 9.5 V/ns T Operating Junction and -55 to + 150 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Drain Lead 20 JL C/W R Junction-to-Ambient 50 JA Notes through are on page 8 www.irf.com 1 IRF7492PbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 200 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.20 V/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 64 79 m V = 10V, I = 2.2A DS(on) GS D V Gate Threshold Voltage 2.5 V V = V , I = 250A GS(th) DS GS D 10 V = 160V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 160V, V = 0V, T = 125C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS Dynamic T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions g Forward Transconductance 7.9 S V = 50V, I = 3.7A fs DS D Q Total Gate Charge 39 59 I = 2.2A g D Q Gate-to-Source Charge 9.2 nC V = 100V gs DS Q Gate-to-Drain Mille) Charge 15 V = 10V gd GS t Turn-On Delay Time 15 V = 100V d(on) DD t Rise Time 13 I = 2.2A r D ns t Turn-Off Delay Time 27 R = 6.5 d(off) G t Fall Time 14 V = 10V f GS C Input Capacitance 1820 V = 0V iss GS C Output Capacitance 190 V = 25V oss DS C Reverse Transfer Capacitance 94 pF = 1.0MHz rss C Output Capacitance 780 V = 0V, V = 1.0V, = 1.0MHz oss GS DS C Output Capacitance 89 V = 0V, V = 160V, = 1.0MHz oss GS DS C eff. Effective Output Capacitance 150 V = 0V, V = 0V to 160V oss GS DS Avalanche Characteristics Parameter Typ. Max. Units E Single Pulse Avalanche Energy 130 mJ AS I Avalanche Current 4.4 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 2.3 (Body Diode) showing the G I Pulsed Source Current integral reverse SM 30 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 2.2A, V = 0V SD J S GS t Reverse Recovery Time 69 100 ns T = 25C, I = 2.2A rr J F Q Reverse RecoveryCharge 200 310 nC di/dt = 100A/s rr 2 www.irf.com