PD - 93940 IRF7701 HEXFET Power MOSFET l Ultra Low On-Resistance V R max I DSS DS(on) D l P-Channel MOSFET 0.011 V = -4.5V -10A GS l Very Small SOIC Package -12V 0.015 V = -2.5V -8.5A GS l Low Profile (< 1.1mm) 0.022 V = -1.8V -7.0A GS l Available in Tape & Reel Description HEXFET power MOSFETs from International Rectifier 1 8 D utilize advanced processing techniques to achieve ex- 2 7 tremely low on-resistance per silicon area. This benefit, 3 6 G combined with the ruggedized device design , that Inter- S 4 5 national Rectifier is well known for, provides thedesigner with an extremely efficient and reliable device for use 1 = D 8 = D 2 = S 7 = S in battery and load management. 3 = S 6 = S 4 = G 5 = D TSSOP-8 The TSSOP-8 package, has 45% less footprint area of the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the TSSOP-8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. Absolute Maximum Ratings Parameter Max. Units V Drain- Source Voltage -12 V DS I T = 25C Continuous Drain Current, V -4.5V 10 D A GS I T = 70C Continuous Drain Current, V -4.5V 8.0 A D A GS I Pulsed Drain Current 80 DM P T = 25C Power Dissipation 1.5 D A W P T = 70C Power Dissipation 0.96 D A Linear Derating Factor 12 mW/C V Gate-to-Source Voltage 8.0 V GS T T Junction and Storage Temperature Range -55 to + 150 C J, STG Thermal Resistance Parameter Max. Units R Maximum Junction-to-Ambient 83 C/W JA www.irf.com 1 6/21/00IRF7701 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage -12 V V = 0V, I = -250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient -0.006 V/C Reference to 25C, I = -1mA (BR)DSS J D 0.011 V = -4.5V, I = -10A GS D R Static Drain-to-Source On-Resistance 0.015 V = -2.5V, I = -8.5A GS D DS(on) 0.022 V = -1.8V, I = -7.0A GS D V Gate Threshold Voltage -0.45 -1.2 V V = V , I = -250A GS(th) DS GS D g Forward Transconductance 21 S V = -10V, I = -10A fs DS D 1.0 V = -12V, V = 0V DS GS I Drain-to-Source Leakage Current DSS A -25 V = -9.6V, V = 0V, T = 70C DS GS J Gate-to-Source Forward Leakage -100 V = -8.0V GS I GSS nA Gate-to-Source Reverse Leakage 100 V = 8.0V GS Q Total Gate Charge 69 100 I = -8.0A g D Q Gate-to-Source Charge 9.1 14 nC V = -9.6V gs DS Q Gate-to-Drain Mille) Charge 21 32 V = -4.5V gd GS t Turn-On Delay Time 19 V = -6.0V d(on) DD ns t Rise Time 20 I = -1.0A r D t Turn-Off Delay Time 240 R = 6.0 d(off) D t Fall Time 220 V = -4.5V f GS C Input Capacitance 5050 V = 0V iss GS C Output Capacitance 1520 pF V = -10V oss DS C Reverse Transfer Capacitance 1120 = 1.0MHz rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S -1.5 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM -80 (Body Diode) p-n junction diode. S V Diode Forward Voltage -1.2 V T = 25C, I = -1.5A, V = 0V SD J S GS t Reverse Recovery Time 52 78 ns T = 25C, I = -1.5A rr J F Q Reverse RecoveryCharge 53 80 nC di/dt = 100A/s rr Notes: Repetitive rating pulse width limited by When mounted on 1 inch square copper board, t<10 sec max. junction temperature. Pulse width 300s duty cycle 2%. 2 www.irf.com