PD -95992 IRF7726PbF HEXFET Power MOSFET Ultra Low On-Resistance P-Channel MOSFET V R max I DSS DS(on) D Very Small SOIC Package -30V 0.026 V = -10V -7.0A GS Low Profile (< 1.2mm) 0.040 V = -4.5V -6.0A GS Available in Tape & Reel Lead-Free Description HEXFET Power MOSFETs from International Recti- A 1 8 S D fier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This 2 7 D S benefit, combined with the ruggedized device design, 3 6 that International Rectifier is well known for, provides S D the designer with an extremely efficient and reliable 4 5 G D device for battery and load management. MICRO-8 The new Micro8 package, with half the footprint area Top View of the standard SO-8, provides the smallest footprint available in an SOIC outline. This makes the Micro8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.2mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. Absolute Maximum Ratings Parameter Max. Units V Drain-Source Voltage -30 V DS I T = 25C Continuous Drain Current, V -10V -7.0 D A GS I T = 70C Continuous Drain Current, V -10V -5.7 A D A GS I Pulsed Drain Current -28 DM P T = 25C Maximum Power Dissipation 1.79 W D A P T = 70C Maximum Power Dissipation 1.14 W D A Linear Derating Factor 0.01 W/C V Gate-to-Source Voltage 20 V GS T , T Junction and Storage Temperature Range -55 to +150 C J STG Thermal Resistance Parameter Max. Units R Maximum Junction-to-Ambient 70 C/W JA www.irf.com 1 02/22/05 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage -30 V V = 0V, I = -250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.016 V/C Reference to 25C, I = -1mA (BR)DSS J D 0.026 V = -10V, I = -7.0A GS D R Static Drain-to-Source On-Resistance DS(on) 0.040 V = -4.5V, I = -6.0A GS D V Gate Threshold Voltage -1.0 -2.5 V V = V , I = -250A GS(th) DS GS D g Forward Transconductance 10 S V = -10V, I = -7.0A fs DS D -15 V = -24V, V = 0V DS GS I Drain-to-Source Leakage Current DSS -25 V = -24V, V = 0V, T = 70C DS GS J Gate-to-Source Forward Leakage -100 V = -20V GS Gate-to-Source Reverse Leakage 100 V = 20V GS Q Total Gate Charge 46 69 I = -7.0A g D Q Gate-to-Source Charge 8.0 nC V = -15V gs DS Q Gate-to-Drain Mille) Charge 8.1 V = -10V gd GS t Turn-On Delay Time 15 23 V = -15V, V = -10V d(on) DD GS t Rise Time 25 38 I = -1.0A r D t Turn-Off Delay Time 227 341 R = 6.0 d(off) G t Fall Time 107 161 R = 15 f D C Input Capacitance 2204 V = 0V iss GS C Output Capacitance 341 pF V = -25V oss DS C Reverse Transfer Capacitance 220 = 1.0MHz rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S -1.8 (Body Diode) showing the G I Pulsed Source Current integral reverse SM -28 (Body Diode) p-n junction diode. S V Diode Forward Voltage -1.2 V T = 25C, I = -1.8A, V = 0V SD J S GS t Reverse Recovery Time 35 53 ns T = 25C, I = -1.8A rr J F Q Reverse Recovery Charge 32 48 C di/dt = -100A/s rr Repetitive rating pulse width limited by When mounted on 1 inch square copper board, t < 10 sec. max. junction temperature. Pulse width 400s duty cycle 2 www.irf.com