DirectFET Power MOSFET RoHS Compliant, Halogen Free Lead-Free (Qualified up to 260C Reflow) Ideal for High Performance Isolated Converter V V R DSS GS DS(on) Primary Switch Socket 40V min 20V max 0.70m 10V Optimized for Synchronous Rectification Q Q V g tot gd gs(th) Low Conduction Losses 220nC 81nC 2.8V High Cdv/dt Immunity Low Profile (<0.7mm) Dual Sided Cooling Compatible Compatible with existing Surface Mount Techniques Industrial Qualified DirectFET ISOMETRIC Applicable DirectFET Outline and Substrate Outline SB SC M2 M4 L4 L6 L8 TM The IRF7739L2TRPbF combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET packaging to achieve 2 the lowest on-state resistance in a package that has a footprint smaller than a D PAK and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems. The IRF7739L2TRPbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance power converters. Part number Package Type Standard Pack Note Form Quantity IRF7739L2TRPbF DirectFET2 Large Can Tape and Reel 4000T suffix IRF7739L2TR1PbF DirectFET2 Large Can Tape and Reel 1000TR1 suffix EOL notice 264 Absolute Maximum Ratings Parameter Max. Units V 40 Drain-to-Source Voltage V DS 20 V Gate-to-Source Voltage GS (Silicon Limited) I T = 25C Continuous Drain Current, V 10V 270 GS D C Continuous Drain Current, V 10V (Silicon Limited) 190 I T = 100C A C GS D Continuous Drain Current, V 10V (Silicon Limited) 46 I T = 25C GS D A (Package Limited) I T = 25C Continuous Drain Current, V 10V 375 GS D C 1070 I Pulsed Drain Current DM E Single Pulse Avalanche Energy 270 mJ AS I 160 Avalanche Current A AR 10 0.93 V = 10V I = 160A GS 0.92 D 8 0.91 T = 25C J 0.90 6 0.89 4 0.88 T = 125C 0.87 J 2 0.86 0 0.85 5.0 5.5 6.0 6.5 7.0 7.5 8.0 0 40 80 120 160 200 I , Drain Current (A) D V Gate -to -Source Voltage (V) GS, Fig 1. Typical On-Resistance vs. Gate Voltage Fig 2. Typical On-Resistance vs. Drain Current Click on this section to link to the appropriate technical paper. T measured with thermocouple mounted to top (Drain) of part. C Repetitive rating pulse width limited by max. junction temperature. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state. Starting T = 25C, L = 0.021mH, R = 25, I = 160A. J G AS Typical R (m) DS(on) Ty (m) pical R DS (on ) Static T = 25C (unless otherwise specified) J Conditions Parameter Min. Typ. Max. Units V = 0V, I = 250A BV Drain-to-Source Breakdown Voltage 40 V DSS GS D V /T Reference to 25C, I = 1.0mA Breakdown Voltage Temp. Coefficient 0.008 V/C D DSS J V = 10V, I = 160A R Static Drain-to-Source On-Resistance 0.70 1.0 m GS D DS(on) V V = V , I = 250A Gate Threshold Voltage 2.0 2.8 4.0 V GS(th) DS GS D V /T Gate Threshold Voltage Coefficient -6.7 mV/C GS(th) J I V = 40V, V = 0V Drain-to-Source Leakage Current 20 A DSS DS GS V = 32V, V = 0V, T = 125C 250 DS GS J I V = 20V Gate-to-Source Forward Leakage 100 nA GSS GS V = -20V Gate-to-Source Reverse Leakage -100 GS V = 10V, I = 160A gfs Forward Transconductance 280 S DS D Q Total Gate Charge 220 330 g Q V = 20V Pre-Vth Gate-to-Source Charge 46 gs1 DS Q V = 10V Post-Vth Gate-to-Source Charge 19 nC GS gs2 Q I = 160A Gate-to-Drain Charge 81 120 gd D Q Gate Charge Overdrive 74 See Fig. 9 godr Q Switch Charge (Q + Q ) 100 sw gs2 gd Q V = 16V, V = 0V Output Charge 83 nC oss DS GS R Gate Resistance 1.5 G t V = 20V, V = 10V Turn-On Delay Time 21 d(on) DD GS I = 160A t Rise Time 71 D r t R =1.8 Turn-Off Delay Time 56 ns d(off) G t Fall Time 42 f C V = 0V Input Capacitance 11880 iss GS C V = 25V Output Capacitance 2510 pF oss DS C Reverse Transfer Capacitance 1240 = 1.0MHz rss = 0V, V = 1.0V, f=1.0MHz C V Output Capacitance 8610 GS DS oss V = 0V, V = 32V, f=1.0MHz C Output Capacitance 2230 GS DS oss Diode Characteristics Conditions Parameter Min. Typ. Max. Units I Continuous Source Current 110 MOSFET symbol S showing the (Body Diode) A I Pulsed Source Current 1070 integral reverse SM p-n junction diode. (Body Diode) T = 25C, I = 160A, V = 0V V Diode Forward Voltage 1.3 V J S GS SD t T = 25C, I = 160A, V = 20V Reverse Recovery Time 87 130 ns rr J F DD Q Reverse Recovery Charge 250 380 nC di/dt = 100A/s rr Repetitive rating pulse width limited by max. junction temperature. Pulse width 400s duty cycle 2%.