PD - 94002
IRF7751
HEXFET Power MOSFET
l Ultra Low On-Resistance
V R max I
DSS DS(on) D
l Dual P-Channel MOSFET
-30V 35m@V = -10V -4.5A
GS
l Very Small SOIC Package
55m@V = -4.5V -3.8A
GS
l Low Profile (< 1.2mm)
l Available in Tape & Reel
Description
8
1
HEXFET power MOSFETs from International Rectifier
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2
utilize advanced processing techniques to achieve ex-
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tremely low on-resistance per silicon area. This benefit,
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4
combined with the ruggedized device design, that Inter-
national Rectifier is well known for, provides the de-
1 = D1 8 = D2
2 = S 1 7 = S 2
signer with an extremely efficient and reliable device
3 = S 1 6 = S 2
for use in battery and load management.
4 = G1 5 = G2
TSSOP-8
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter Max. Units
V Drain-Source Voltage -30 V
DS
I @ T = 25C Continuous Drain Current, V @ -10V -4.5
D C GS
I @ T = 70C Continuous Drain Current, V @ -10V -3.6 A
D C GS
I Pulsed Drain Current -18
DM
P @T = 25C Power Dissipation 1.0
D C
W
P @T = 70C Power Dissipation 0.64
D C
Linear Derating Factor 0.008 W/C
V Gate-to-Source Voltage 20 V
GS
T T Junction and Storage Temperature Range -55 to +150 C
J, STG
Thermal Resistance
Parameter Max. Units
R Maximum Junction-to-Ambient 125 C/W
JA
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10/04/2000IRF7751
Electrical Characteristics @ T = 25C (unless otherwise specified)
J
Parameter Min. Typ. Max. Units Conditions
V Drain-to-Source Breakdown Voltage -30 V V = 0V, I = -250A
(BR)DSS GS D
V /T Breakdown Voltage Temp. Coefficient 0.020 V/C Reference to 25C, I = -1mA
(BR)DSS J D
35 V = -10V, I = -4.5A
GS D
R Static Drain-to-Source On-Resistance
DS(on) m
55 V = -4.5V, I = -3.8A
GS D
V Gate Threshold Voltage -1.0 -2.5 V V = V , I = -250A
GS(th) DS GS D
g Forward Transconductance 6.8 S V = -10V, I = -4.5A
fs DS D
-15 V = -24V, V = 0V
DS GS
I Drain-to-Source Leakage Current
DSS A
-25 V = -24V, V = 0V, T = 70C
DS GS J
Gate-to-Source Forward Leakage -100 V = -20V
GS
I
nA
GSS
Gate-to-Source Reverse Leakage 100 V = 20V
GS
Q Total Gate Charge 29 44 I = -4.5A
g D
Q Gate-to-Source Charge 5.5 nC V = -15V
gs DS
Q Gate-to-Drain Mille) Charge 5.0 V = -10V
gd GS
t Turn-On Delay Time 13 20 V = -15V
d(on) DD
t Rise Time 16 24 I = -1.0A
r D
ns
t Turn-Off Delay Time 155 233 R = 6.0
d(off) G
t Fall Time 80 120 V = -10V
f GS
C Input Capacitance 1464 V = 0V
iss GS
C Output Capacitance 227 pF V = -25V
oss DS
C Reverse Transfer Capacitance 146 = 1.0MHz
rss
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
D
I Continuous Source Current MOSFET symbol
S
-1.0
(Body Diode) showing the
A
G
I Pulsed Source Current integral reverse
SM
-18
(Body Diode) p-n junction diode.
S
V Diode Forward Voltage -1.2 V T = 25C, I = -1.0A, V = 0V
SD J S GS
t Reverse Recovery Time 23 35 ns T = 25C, I = -1.0A
rr J F
Q Reverse RecoveryCharge 19 28 nC di/dt = 100A/s
rr
Notes:
Repetitive rating; pulse width limited by
When mounted on 1 inch square copper board, t < 10 sec.
max. junction temperature.
Pulse width 400s; duty cycle 2%.
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