PD- 95208 IRF7807D1PbF FETKY MOSFET / SCHOTTKY DIODE Co-Pack N-channel HEXFET Power MOSFET 1 8 K/D A/S and Schottky Diode 2 7 A/S K/D Ideal for Synchronous Rectifiers in DC-DC 3 6 Converters Up to 5A Output A/S K/D Low Conduction Losses 4 5 G K/D Low Switching Losses Low Vf Schottky Rectifier SO-8 Top View Lead-Free Description The FETKY family of Co-Pack HEXFET MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. HEXFET power MOSFETs utilize advanced processing techniques to achieve IRF7807D1 V 30V extremely low on-resistance per silicon area. Combining DS R 25m this technology with International Rectifiers low forward DS(on) Q 14nC drop Schottky rectifiers results in an extremely efficient g device suitable for use in a wide variety of portable Q 5.2nC sw electronics applications. Q 18.4nC oss The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO- 8 package is designed for vapor phase, infrared or wave soldering techniques. Absolute Maximum Ratings Parameter Symbol Max. Units Drain-Source Voltage V 30 DS V Gate-Source Voltage V 12 GS Continuous Drain or Source 25C I 8.3 D Current (V 4.5V) 70C 6.6 A GS Pulsed Drain Current I 66 DM Power Dissipation 25C P 2.5 D W 70C 1.6 Schottky and Body Diode 25C I (AV) 3.5 A F Average ForwardCurrent 70C 2.2 Junction & Storage Temperature Range T ,T 55 to 150 C J STG Thermal Resistance Parameter Max. Units Maximum Junction-to-Ambient R 50 C/W JA www.irf.com 1 Electrical Characteristics Parameter Min Typ Max Units Conditions Drain-to-Source V 30 V V = 0V, I = 250A (BR)DSS GS D Breakdown Voltage* Static Drain-Source R (on) 17 25 m V = 4.5V, I = 7A DS GS D on Resistance* Gate Threshold Voltage* V (th) 1.0 V V = V ,I = 250A GS DS GS D Drain-Source Leakage I 90 AV = 24V, V = 0V DSS DS GS Current* 7.2 mA V = 24V, V = 0V, DS GS T = 125C j Gate-Source Leakage I +/- 100 nA V = +/-12V GSS GS Current* Total Gate Charge Q 10.5 14 V <100mV, gsync DS Synch FET* V = 5V, I = 7A GS D Total Gate Charge Q 12 17 V = 16V, gcont DS Control FET* V = 5V, I = 7A GS D Pre-Vth Q 2.1 V = 16V, I = 7A gs1 DS D Gate-Source Charge Post-Vth Q 0.76 nC gs2 Gate-Source Charge Gate to Drain Charge Q 2.9 gd Switch Charge* Q 3.66 5.2 SW (Q + Q ) gs2 gd Output Charge* Q 15.3 18.4 V = 16V, V = 0 oss DS GS Gate Resistance R 1.2 g Schottky Diode & Body Diode Ratings and Characteristics Parameter Min Typ Max Units Conditions Diode Forward Voltage V 0.5 V T = 25C, I = 1A, V =0V SD j s GS 0.39 T = 125C, I = 1A, V =0V j s GS Reverse Recovery Time trr 51 ns T = 25C, I = 7.0A, V = 16V j s DS Reverse Recovery Charge Qrr 48 nC di/dt = 100A/s Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D Repetitive rating pulse width limited by max. junction temperature. Pulse width 300 s duty cycle 2%. When mounted on 1 inch square copper board, t < 10 sec. 50% Duty Cycle, Rectangular * Devices are 100% tested to these parameters. 2 www.irf.com