PD-95291 IRF7807VD2PbF FETKY MOSFET / SCHOTTKY DIODE Co-Pack N-channel HEXFET Power MOSFET and Schottky Diode 1 8 A/S K/D Ideal for Synchronous Rectifiers in DC-DC Converters Up to 5A Output 2 7 A/S K/D Low Conduction Losses 3 6 A/S K/D Low Switching Losses 4 5 Low Vf Schottky Rectifier G K/D D Lead-Free Top View SO-8 Description The FETKY family of Co-Pack HEXFET MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. HEXFET power MOSFETs DEVICE CHARACTERISTICS utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining IRF7807VD2 this technology with International Rectifiers low forward R 17m drop Schottky rectifiers results in an extremely efficient DS(on) device suitable for use in a wide variety of portable Q 9.5nC G electronics applications. Q 3.4nC sw The SO-8 has been modified through a customized Q 12nC oss leadframe for enhanced thermal characteristics. The SO- 8 package is designed for vapor phase, infrared or wave soldering techniques. Absolute Maximum Ratings Parameter Symbol Max. Units Drain-Source Voltage V 30 DS V Gate-Source Voltage V 20 GS Continuous Drain or Source 25C I 8.3 D Current (V 4.5V) 70C 6.6 A GS Pulsed Drain Current I 66 DM Power Dissipation 25C P 2.5 D W 70C 1.6 Schottky and Body Diode 25C I (AV) 3.7 A F Average ForwardCurrent 70C 2.3 Junction & Storage Temperature Range T ,T 55 to 150 C J STG Thermal Resistance Parameter Max. Units Maximum Junction-to-Ambient R 50 C/W JA Maximum Junction-to-Lead R 20 C/W JL www.irf.com 1 10/08/04IRF7807VD2PbF Electrical Characteristics Parameter Min Typ Max Units Conditions Drain-to-Source BV 30 V V = 0V, I = 250A DSS GS D Breakdown Voltage Static Drain-Source R 17 25 m V = 4.5V, I = 7.0A DS(on) GS D on Resistance Gate Threshold Voltage V 1.0 V V = V ,I = 250A GS(th) DS GS D Drain-Source Leakage I 50 A V = 24V, V = 0 DSS DS GS Current Current* 6.0 mA V = 24V, V = 0, DS GS Tj = 100C Gate-Source Leakage I 100 nA V = 20V GSS GS Current* Total Gate Charge* Q 9.5 14 V =4.5V, I =7.0A G GS D Pre-Vth Q 2.3 GS1 Gate-Source Charge V = 16V DS Post-Vth Q 1.0 nC GS2 Gate-Source Charge Gate to Drain Charge Q 2.4 GD Switch Chg(Q + Q ) Q 3.4 5.2 gs2 gd sw Output Charge* Q 12 16.8 V = 16V, V = 0 oss DS GS Gate Resistance R 2.0 G Turn-on Delay Time t 6.3 V = 16V, I = 7.0A d (on) DD D Rise Time t 1.2 ns V = 5V, R = 2 r GS G Turn-off Delay Time t 11 Resistive Load d (off) Fall Time t 2.2 f Schottky Diode & Body Diode Ratings and Characteristics Parameter Min Typ Max Units Conditions Diode Forward Voltage V 0.54 V T = 25C, I = 3.0A, V =0V SD j s GS 0.43 T = 125C, I = 3.0A, V =0V j s GS Reverse Recovery Time trr 36 ns T = 25C, I = 7.0A, V = 16V j s DS Reverse Recovery Charge Qrr 41 nC di/dt = 100A/s Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D Notes: Repetitive rating pulse width limited by max. junction temperature. Pulse width 400 s duty cycle 2%. When mounted on 1 inch square copper board 50% Duty Cycle, Rectangular Typical values of R (on) measured at V = 4.5V, Q , Q and Q DS GS G SW OSS measured at V = 5.0V, I = 7.0A. GS F * Device are 100% tested to these parameters. 2 www.irf.com