PD-95291
IRF7807VD2PbF
FETKY MOSFET / SCHOTTKY DIODE
Co-Pack N-channel HEXFET Power MOSFET
and Schottky Diode
1
8
A/S K/D
Ideal for Synchronous Rectifiers in DC-DC
Converters Up to 5A Output 2 7
A/S K/D
Low Conduction Losses
3 6
A/S K/D
Low Switching Losses
4 5
Low Vf Schottky Rectifier G K/D
D
Lead-Free
Top View
SO-8
Description
The FETKY family of Co-Pack HEXFET MOSFETs and
Schottky diodes offers the designer an innovative, board
space saving solution for switching regulator and power
management applications. HEXFET power MOSFETs
DEVICE CHARACTERISTICS
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. Combining
IRF7807VD2
this technology with International Rectifiers low forward
R 17m
drop Schottky rectifiers results in an extremely efficient
DS(on)
device suitable for use in a wide variety of portable
Q 9.5nC
G
electronics applications.
Q 3.4nC
sw
The SO-8 has been modified through a customized
Q 12nC
oss
leadframe for enhanced thermal characteristics. The SO-
8 package is designed for vapor phase, infrared or wave
soldering techniques.
Absolute Maximum Ratings
Parameter Symbol Max. Units
Drain-Source Voltage V 30
DS
V
Gate-Source Voltage V 20
GS
Continuous Drain or Source 25C I 8.3
D
Current (V 4.5V) 70C 6.6 A
GS
Pulsed Drain Current I 66
DM
Power Dissipation 25C P 2.5
D
W
70C 1.6
Schottky and Body Diode 25C I (AV) 3.7 A
F
Average ForwardCurrent 70C 2.3
Junction & Storage Temperature Range T ,T 55 to 150 C
J STG
Thermal Resistance
Parameter Max. Units
Maximum Junction-to-Ambient R 50 C/W
JA
Maximum Junction-to-Lead R 20 C/W
JL
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10/08/04IRF7807VD2PbF
Electrical Characteristics
Parameter Min Typ Max Units Conditions
Drain-to-Source BV 30 V V = 0V, I = 250A
DSS GS D
Breakdown Voltage
Static Drain-Source R 17 25 m V = 4.5V, I = 7.0A
DS(on) GS D
on Resistance
Gate Threshold Voltage V 1.0 V V = V ,I = 250A
GS(th) DS GS D
Drain-Source Leakage I 50 A V = 24V, V = 0
DSS DS GS
Current
Current* 6.0 mA V = 24V, V = 0,
DS GS
Tj = 100C
Gate-Source Leakage I 100 nA V = 20V
GSS GS
Current*
Total Gate Charge* Q 9.5 14 V =4.5V, I =7.0A
G GS D
Pre-Vth Q 2.3
GS1
Gate-Source Charge V = 16V
DS
Post-Vth Q 1.0 nC
GS2
Gate-Source Charge
Gate to Drain Charge Q 2.4
GD
Switch Chg(Q + Q ) Q 3.4 5.2
gs2 gd sw
Output Charge* Q 12 16.8 V = 16V, V = 0
oss DS GS
Gate Resistance R 2.0
G
Turn-on Delay Time t 6.3 V = 16V, I = 7.0A
d (on) DD D
Rise Time t 1.2 ns V = 5V, R = 2
r GS G
Turn-off Delay Time t 11 Resistive Load
d (off)
Fall Time t 2.2
f
Schottky Diode & Body Diode Ratings and Characteristics
Parameter Min Typ Max Units Conditions
Diode Forward Voltage V 0.54 V T = 25C, I = 3.0A, V =0V
SD j s GS
0.43 T = 125C, I = 3.0A, V =0V
j s GS
Reverse Recovery Time trr 36 ns T = 25C, I = 7.0A, V = 16V
j s DS
Reverse Recovery Charge Qrr 41 nC di/dt = 100A/s
Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L +L )
on S D
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width 400 s; duty cycle 2%.
When mounted on 1 inch square copper board
50% Duty Cycle, Rectangular
Typical values of R (on) measured at V = 4.5V, Q , Q and Q
DS
GS G SW OSS
measured at V = 5.0V, I = 7.0A.
GS F
* Device are 100% tested to these parameters.
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