PD-95210 IRF7807VPbF N Channel Application Specific MOSFET HEXFET Power MOSFET Ideal for Mobile DC-DC Converters Low Conduction Losses A Low Switching Losses 1 8 D S 100% R Tested G 2 7 Lead-Free S D 3 6 S D 4 5 Description G D This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented SO-8 Top View balance of on-resistance and gate charge. The reduction of conduction and switching losses makes it ideal for high efficiency DC-DC Converters that DEVICE CHARACTERISTICS power the latest generation of mobile microprocessors. IRF7807V A pair of IRF7807V devices provides the best cost/ 17 m R DS(on) performance solution for system voltages, such as Q 9.5 nC 3.3V and 5V. G Q 3.4 nC SW Q 12 nC OSS Absolute Maximum Ratings Parameter Symbol IRF7807V Units V Drain-Source Voltage DS 30 V V Gate-Source Voltage GS 20 T = 25C Continuous Drain or Source A 8.3 I D (V 4.5V) T = 70C A GS A 6.6 Pulsed Drain Current I 66 DM T = 25C A 2.5 Power Dissipation P W D T = 70C A 1.6 T , T Junction & Storage Temperature Range -55 to 150 C J STG Continuous Source Current (Body Diode) I S 2.5 A Pulsed Source Current I SM 66 Thermal Resistance Parameter Symbol Typ Max Units Maximum Junction-to-Ambient R 50 JA C/W R 20 Maximum Junction-to-Lead JL 11/3/04 IRF7807VPbF Electrical Characteristics Parameter Symbol Min Typ Max Units Conditions Drain-Source Breakdown Voltage BV 30 V V = 0V, I = 250A DSS GS D Static Drain-Source On-Resistance R 17 25 m V = 4.5V, I = 7.0A DS(on) GS D Gate Threshold Voltage V 1.0 3.0 V V = V , I = 250A GS(th) DS GS D 100 V = 30V, V = 0 DS GS I Drain-Source Leakage Current 20 A V = 24V, V = 0 DSS DS GS 100 V = 24V, V = 0, T = 100C DS GS J Gate-Source Leakage Current* I 100 nA V = 20V GSS GS Total Gate Charge* Q 9.5 14 V = 5V, I = 7.0A G GS D Q V = 16V Pre-Vth Gate-Source Charge 2.3 DS GS1 Post-Vth Gate-Source Charge Q 1.0 GS2 nC Gate-to-Drain Charge Q 2.4 GD Switch Charge (Q + Q)Q 3.4 5.2 gs2 gd SW Output Charge* Q 12 16.8 V = 16V, V = 0 OSS DS GS R Gate Resistance 0.9 2.8 G Turn-On Delay Time t 6.3 V = 16V d(on) DD Rise Time t 1.2 I = 7A r D ns Turn-Off Delay Time t 11 V = 5V, R = 2 d(off) GS G Fall Time t 2.2 Resistive Load f Source-Drain Ratings and Characteristics Parameter Symbol Min Typ Max Units Conditions I = 7.0A ,V = 0V Diode Forward Voltage* V SD S GS 1.2 V di/dt = 700A/s Q Reverse Recovery Charge 64 rr V = 16V, V = 0V, I = 7.0A DS GS S nC Reverse Recovery Charge di/dt = 700A/s , (with 10BQ040) Q 41 rr(s) (with Parallel Schottsky) V = 16V, V = 0V, I = 7.0A DS GS S Notes: Repetitive rating pulse width limited by max. junction temperature. Pulse width 400 s duty cycle 2%. When mounted on 1 inch square copper board Typ = measured - Q oss Typical values of R (on) measured at V = 4.5V, Q , Q and Q DS GS G SW OSS measured at V = 5.0V, I = 7.0A. GS F * Device are 100% tested to these parameters. 2 www.irf.com