IRF7807ZPbF HEXFET Power MOSFET Applications V R max Qg(typ.) DSS DS(on) Control FET for Notebook Processor Power 13.8m V = 10V 30V 7.2nC GS Synchronous Rectifier MOSFET for Graphics Cards and POL Converters in Networking and Telecommunication Systems A A 1 8 S D Benefits 2 7 S D Very Low R at 4.5V V DS(on) GS 3 6 S D Ultra-Low Gate Impedance 4 5 G D Fully Characterized Avalanche Voltage and Current SO-8 Top View 100% Tested for R G Lead-Free Absolute Maximum Ratings Parameter Max. Units V DS Drain-to-Source Voltage 30 V V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V GS 11 D A Continuous Drain Current, V 10V I T = 70C GS 8.7 A D A Pulsed Drain Current I 88 DM Power Dissipation P T = 25C 2.5 W D A Power Dissipation P T = 70C 1.6 A D Linear Derating Factor 0.02 W/C T Operating Junction and -55 to + 150 C J T Storage Temperature Range STG Thermal Resistance Parameter Typ. Max. Units R JL Junction-to-Drain Lead 20 C/W Junction-to-Ambient R 50 JA Notes through are on page 10 www.irf.com 1 6/29/06 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A DSS GS D /T Breakdown Voltage Temp. Coefficient 0.023 V/C = 1mA V Reference to 25C, I DSS J D m R Static Drain-to-Source On-Resistance 11 13.8 V = 10V, I = 11A DS(on) GS D 14.5 18.2 V = 4.5V, I = 8.8A GS D V Gate Threshold Voltage 1.35 1.8 2.25 V V = V , I = 250A GS(th) DS GS D V Gate Threshold Voltage Coefficient - 4.7 mV/C GS(th) I Drain-to-Source Leakage Current 1.0 A V = 24V, V = 0V DSS DS GS 150 V = 24V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 22 S V = 15V, I = 8.8A DS D Q Total Gate Charge 7.2 11 g Q Pre-Vth Gate-to-Source Charge 2.1 V = 15V gs1 DS Q Post-Vth Gate-to-Source Charge 0.7 nC V = 4.5V gs2 GS Q Gate-to-Drain Charge 2.7 I = 8.8A gd D Q Gate Charge Overdrive 1.7 See Fig. 16 godr Q Switch Charge (Q + Q ) 3.4 sw gs2 gd Q Output Charge 2.8 nC V = 15V, V = 0V oss DS GS R Gate Resistance 2.5 4.8 G t Turn-On Delay Time 6.9 V = 15V, V = 4.5V d(on) DD GS t Rise Time 6.2 I = 8.8A r D t Turn-Off Delay Time 10 ns Clamped Inductive Load d(off) t Fall Time 3.1 f C Input Capacitance 770 V = 0V iss GS C Output Capacitance 190 pF V = 15V oss DS C Reverse Transfer Capacitance 100 = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E 63 mJ AS Avalanche Current I 8.8 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current 3.1 MOSFET symbol S (Body Diode) A showing the I Pulsed Source Current 88 integral reverse SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.0 V T = 25C, I = 8.8A, V = 0V SD J S GS t Reverse Recovery Time 31 46 ns T = 25C, I = 8.8A, V = 15V rr J F DD Q Reverse Recovery Charge 17 26 nC di/dt = 100A/s rr 2 www.irf.com