PD-95214A
IRF7828PbF
HEXFET Power MOSFET for DC-DC Converters
N-Channel Application-Specific MOSFETs
Ideal for CPU Core DC-DC Converters
Low Conduction Losses
A
1
Low Switching Losses 8
D
S
Lead-Free
2 7
S D
3 6
S D
Description
4 5
G D
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The reduced SO-8 Top View
conduction and switching losses make it ideal for high
efficiency DC-DC converters that power the latest
generation of microprocessors.
DEVICE CHARACTERISTICS
The IRF7828 has been optimized for all parameters that
IRF7828PbF
are critical in synchronous buck converters including
R 9.5m
R , gate charge and Cdv/dt-induced turn-on immunity.
DS(on)
DS(on)
The IRF7828 offers particulary low R and high Cdv/dt
DS(on)
Q 9.2nC
G
immunity for synchronous FET applications.
Q 3.7nC
sw
The package is designed for vapor phase, infra-red,
Q 6.1nC
oss
convection, or wave soldering techniques. Power
dissipation of greater than 3W is possible in a typical
PCB mount application.
Absolute Maximum Ratings
Parameter Symbol IRF7828PbF Units
Drain-Source Voltage V 30 V
DS
Gate-Source Voltage V 20
GS
Continuous Drain or Source T = 25C I 13.6
A D
Current (V 4.5V) T = 70C 11 A
GS L
Pulsed Drain Current I 100
DM
Power Dissipation T = 25C P 2.5 W
A D
T = 70C 1.6
L
Junction & Storage Temperature Range T ,T 55 to 150 C
J STG
Continuous Source Current (Body Diode) I 3.1 A
S
Pulsed Source Current I 100
SM
Thermal Resistance
Parameter Max. Units
Maximum Junction-to-Ambient R 50 C/W
JA
Maximum Junction-to-Lead R 20 C/W
JL
04/05/07IRF7828PbF
Electrical Characteristics
Parameter Min Typ Max Units Conditions
Drain-to-Source BV 30 V V = 0V, I = 250A
DSS GS D
Breakdown Voltage
Static Drain-Source R 9.5 12.5 m V = 4.5V, I = 10A
DS GS D
(on)
on Resistance
Gate Threshold Voltage V 1.0 V V = V ,I = 250A
GS(th) DS GS D
Drain-Source Leakage I 1.0 V = 24V, V = 0
DSS DS GS
Current
Current* 150 A V = 24V, V = 0,
DS GS
Tj = 125C
Gate-Source Leakage I 100 nA V = 20V
GSS GS
Current
Total Gate Chg Cont FET Q 9.2 14 V =5.0V, I =15A, V =16V
G GS D DS
Total Gate Chg Sync FET Q 7.3 V = 5V, V < 100mV
G GS DS
Pre-Vth Q 2.5 V = 15V, I = 10A
GS1 DS D
Gate-Source Charge
Post-Vth Q 0.8 nC
GS2
Gate-Source Charge
Gate to Drain Charge Q 2.9
GD
Switch Chg(Q + Q ) Q 3.7
gs2 gd sw
Output Charge Q 6.1 V = 10V, V = 0
oss DS GS
Gate Resistance R 2.3
G
Turn-on Delay Time t 6.3 V = 15V, I = 10A
d (on) DD D
Rise Time t 2.7 ns V = 4.5V
r GS
Turn-off Delay Time t 9.7 Clamped Inductive Load
d (off)
Fall Time t 7.3
f
Input Capacitance C 1010
iss
Output Capacitance C 360 pF V = 15V, V = 0
oss DS GS
Reverse Transfer Capacitance C 110
rss
Source-Drain Rating & Characteristics
Parameter Min Typ Max Units Conditions
Diode Forward V 1.0 V I = 10A, V = 0V
SD S GS
Voltage*
Reverse Recovery Q 13 nC di/dt ~ 700A/s
rr
Charge
V = 16V, V = 0V, I = 15A
DS GS S
Reverse Recovery Q 13 nC di/dt = 700A/s
rr(s)
Charge (with Parallel (with 10BQ040)
Schottky) V = 16V, V = 0V, I = 15A
DS GS S
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width 400 s; duty cycle 2%.
When mounted on 1 inch square copper board
Typ = measured - Q
oss
Typical values of R (on) measured at V = 4.5V, Q , Q and Q
DS
GS G SW OSS
measured at V = 5.0V, I = 10A.
GS F
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