IRF7831PbF HEXFET Power MOSFET Applications V R max Qg (typ.) DSS DS(on) High Frequency Point-of-Load 3.6m V = 10V 30V 40nC GS Synchronous Buck Converter for Applications in Networking & Computing Systems. A A 1 8 S D Benefits 2 7 S D Very Low R at 4.5V V DS(on) GS 3 6 S D Ultra-Low Gate Impedance 4 5 G D Fully Characterized Avalanche Voltage and Current SO-8 Top View 100% Tested for R G Lead-Free Absolute Maximum Ratings Parameter Max. Units V DS Drain-to-Source Voltage 30 V V Gate-to-Source Voltage 12 GS T = 25C Continuous Drain Current, V 10V I GS 21 D A Continuous Drain Current, V 10V I T = 70C 17 A D A GS Pulsed Drain Current I 170 DM Power Dissipation P T = 25C 2.5 W A D Power Dissipation P T = 70C 1.6 A D Linear Derating Factor 0.02 W/C T Operating Junction and -55 to + 150 C J T Storage Temperature Range STG Thermal Resistance Parameter Typ. Max. Units R Junction-to-Drain Lead 20 C/W JL Junction-to-Ambient R 50 JA Notes through are on page 10 www.irf.com 1 6/30/05 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.025 V/C Reference to 25C, I = 1mA DSS J D R Static Drain-to-Source On-Resistance 2.5 3.1 3.6 m V = 10V, I = 20A DS(on) GS D 3.0 3.7 4.4 V = 4.5V, I = 16A GS D V Gate Threshold Voltage 1.35 2.35 V V = V , I = 250A GS(th) DS GS D V Gate Threshold Voltage Coefficient - 5.7 mV/C GS(th) I Drain-to-Source Leakage Current 1.0 A V = 24V, V = 0V DSS DS GS 150 V = 24V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 nA V = 12V GSS GS Gate-to-Source Reverse Leakage -100 V = -12V GS gfs Forward Transconductance 97 S V = 15V, I = 16A DS D Q Total Gate Charge 40 60 g Q Pre-Vth Gate-to-Source Charge 12 V = 15V gs1 DS Q Post-Vth Gate-to-Source Charge 3.1 nC V = 4.5V gs2 GS Q Gate-to-Drain Charge 11 I = 16A gd D Q Gate Charge Overdrive 14 See Fig. 16 godr Q Switch Charge (Q + Q ) 14 sw gs2 gd Q Output Charge 22 nC V = 16V, V = 0V oss DS GS R Gate Resistance 1.4 2.5 G t Turn-On Delay Time 18 V = 15V, V = 4.5V d(on) DD GS t Rise Time 10 I = 16A r D t Turn-Off Delay Time 17 ns Clamped Inductive Load d(off) t Fall Time 5.3 f C Input Capacitance 6240 V = 0V iss GS C Output Capacitance 980 pF V = 15V oss DS C Reverse Transfer Capacitance 390 = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E 100 mJ AS Avalanche Current I 16 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current 2.5 MOSFET symbol S (Body Diode) A showing the I Pulsed Source Current 170 integral reverse SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.2 V T = 25C, I = 16A, V = 0V SD J S GS t Reverse Recovery Time 42 62 ns T = 25C, I = 16A, V = 25V rr J F DD Q Reverse Recovery Charge 31 47 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D 2 www.irf.com