IRF7832PbF HEXFET Power MOSFET Applications V R max Qg DSS DS(on) Synchronous MOSFET for Notebook Processor Power 4.0m V = 10V 30V 34nC GS Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems A A 1 8 S D Lead-Free 2 7 S D Benefits 3 6 S D Very Low R at 4.5V V DS(on) GS 4 5 G D Ultra-Low Gate Impedance SO-8 Fully Characterized Avalanche Voltage Top View and Current 20V V Max. Gate Rating GS 100% tested for Rg Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 30 V DS V Gate-to-Source Voltage 20 GS Continuous Drain Current, V 10V I T = 25C GS 20 D A Continuous Drain Current, V 10V I T = 70C 16 A A GS D Pulsed Drain Current I 160 DM P T = 25C Power Dissipation 2.5 W D A P T = 70C Power Dissipation 1.6 D A Linear Derating Factor 0.02 W/C T Operating Junction and -55 to + 155 C J T Storage Temperature Range STG Thermal Resistance Parameter Typ. Max. Units R JL Junction-to-Drain Lead 20 C/W Junction-to-Ambient R 50 JA Notes through are on page 10 www.irf.com 1 06/30/05 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV DSS Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A GS D V /T Breakdown Voltage Temp. Coefficient 0.023 V/C Reference to 25C, I = 1mA DSS J D R Static Drain-to-Source On-Resistance 3.1 4.0 V = 10V, I = 20A DS(on) m GS D 3.7 4.8 V = 4.5V, I = 16A GS D V GS(th) Gate Threshold Voltage 1.39 2.32 V V = V , I = 250A DS GS D V GS(th) Gate Threshold Voltage Coefficient 5.7 mV/C I DSS Drain-to-Source Leakage Current 1.0 A V = 24V, V = 0V DS GS 150 V = 24V, V = 0V, T = 125C DS GS J I GSS Gate-to-Source Forward Leakage 100 nA V = 20V GS Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 77 S V = 15V, I = 16A DS D Q Total Gate Charge 34 51 g Q gs1 Pre-Vth Gate-to-Source Charge 8.6 V = 15V DS Q gs2 Post-Vth Gate-to-Source Charge 2.9 nC V = 4.5V GS Q gd Gate-to-Drain Charge 12 I = 16A D Q godr Gate Charge Overdrive 10.5 See Fig. 16 Q Switch Charge (Q + Q ) sw gs2 gd 14.9 Q oss Output Charge 23 nC V = 16V, V = 0V DS GS R g Gate Resistance 1.2 2.4 t Turn-On Delay Time 12 V = 15V, V = 4.5V d(on) DD GS t Rise Time 6.7 I = 16A r D t Turn-Off Delay Time 21 ns d(off) Clamped Inductive Load t Fall Time 13 f C iss Input Capacitance 4310 V = 0V GS C oss Output Capacitance 990 pF V = 15V DS C rss Reverse Transfer Capacitance 450 = 1.0MHz Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E 260 mJ AS Avalanche Current I 16 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current 3.1 MOSFET symbol S (Body Diode) A showing the G I SM Pulsed Source Current 160 integral reverse S (Body Diode) p-n junction diode. V SD Diode Forward Voltage 1.0 V T = 25C, I = 16A, V = 0V J S GS t rr Reverse Recovery Time 41 62 ns T = 25C, I = 16A, V = 10V DD J F Q di/dt = 100A/s Reverse Recovery Charge 39 59 nC rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on 2 www.irf.com