IRF7910PbF HEXFET Power MOSFET Applications V R max I DSS DS(on) D High Frequency 3.3V and 5V input Point- 12V 15m V = 4.5V 10A GS of-Load Synchronous Buck Converters for Netcom and Computing Applications Power Management for Netcom, Computing and Portable Applications 1 8 Lead-Free S1 D1 2 7 G1 D1 3 6 Benefits S2 D2 4 5 G2 D2 Ultra-Low Gate Impedance Very Low R DS(on) SO-8 Top View Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings Symbol Parameter Max. Units V Drain-Source Voltage 12 V DS V Gate-to-Source Voltage 12 V GS I T = 25C Continuous Drain Current, V 4.5V 10 D A GS I T = 70C Continuous Drain Current, V 4.5V 7.9 A D A GS I Pulsed Drain Current 79 DM P T = 25C Maximum Power Dissipation 2.0 W D A P T = 70C Maximum Power Dissipation 1.3 W D A Linear Derating Factor 16 mW/C T , T Junction and Storage Temperature Range -55 to + 150 C J STG Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Drain Lead 42 JL C/W R Junction-to-Ambient 62.5 JA Notes through are on page 8 www.irf.com 1 IRF7910PbF Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 12 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.01 V/C Reference to 25C, I = 1mA (BR)DSS J D 11.5 15 V = 4.5V, I = 8.0A GS D R Static Drain-to-Source On-Resistance m DS(on) 20 50 V = 2.8V, I = 5.0A GS D V Gate Threshold Voltage 0.6 2.0 V V = V , I = 250A GS(th) DS GS D 100 V = 9.6V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 9.6V, V = 0V, T = 125C DS GS J Gate-to-Source Forward Leakage 200 V = 12V GS I GSS nA Gate-to-Source Reverse Leakage -200 V = -12V GS Dynamic T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions g Forward Transconductance 18 S V = 6.0V, I = 8.0A fs DS D Q Total Gate Charge 17 26 I = 8.0A g D Q Gate-to-Source Charge 4.4 nC V = 6.0V gs DS Q Gate-to-Drain Mille) Charge 5.2 V = 4.5V gd GS Q Output Gate Charge 16 V = 0V, V = 10V oss GS DS t Turn-On Delay Time 9.4 V = 6.0V d(on) DD t Rise Time 22 I = 8.0A r D ns t Turn-Off Delay Time 16 R = 1.8 d(off) G t Fall Time 6.3 V = 4.5V f GS C Input Capacitance 1730 V = 0V iss GS C Output Capacitance 1340 V = 6.0V oss DS C Reverse Transfer Capacitance 330 pF = 1.0MHz rss Avalanche Characteristics Symbol Parameter Typ. Max. Units E Single Pulse Avalanche Energy 100 mJ AS I Avalanche Current 8.0 A AR Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 1.8 (Body Diode) showing the G I Pulsed Source Current integral reverse SM 79 (Body Diode) p-n junction diode. S 0.85 1.3 V T = 25C, I = 8.0A, V = 0V J S GS V Diode Forward Voltage SD 0.70 T = 125C, I = 8.0A, V = 0V J S GS t Reverse Recovery Time 50 75 ns T = 25C, I = 8.0A, V =12V rr J F R Q Reverse Recovery Charge 60 90 nC di/dt = 100A/s rr t Reverse Recovery Time 51 77 ns T = 125C, I = 8.0A, V =12V rr J F R Q Reverse Recovery Charge 60 90 nC di/dt = 100A/s rr 2 www.irf.com