IRF8910TRPBF Infineon

Name: IRF8910TRPBF
Brand: Infineon
SKU: IRF8910TRPBF_Infineon
Availability: OutOfStock
Rating: 5 (11 reviews)

IRF8910TRPBF electronic component of Infineon

Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of IRF8910TRPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRF8910TRPBF MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No.	IRF8910TRPBF
Manufacturer:	Infineon
Category:	MOSFETs
Description:	Transistor: N-MOSFET x2; unipolar; 20V; 10A; 2W; SO8
Datasheet:	IRF8910TRPBF Datasheet (PDF)

Price (USD)

1: USD 2.2879 ea
Line Total: USD 2.29

Availability : 0

Qty	Unit Price
1	$ 2.2879
10	$ 0.8031
100	$ 0.5511
500	$ 0.4606
1000	$ 0.3919
2000	$ 0.3491
4000	$ 0.3113

IRF8910TRPBF More Buying Options & Price Grid(s)

Availability

Price (USD)

Quantity

Availability 208

Ship by Tue. 11 Nov to Mon. 17 Nov

MOQ : 200
Multiples : 1

Qty	Unit Price
200	$ 1.3

We are delighted to provide the IRF8910TRPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRF8910TRPBF and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The Infineon IRF8910TRPBF is a dual N-channel MOSFET transistor. It is a unipolar device, meaning that it contains only one type of channel (N-type). It has a voltage rating of 20V and a maximum continuous current rating of 10A. The device can handle maximum power dissipation up to 2W and is packaged in an SO8 surface mount package. This is a handy all-in-one Power MOSFET solution for a wide variety of applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

CYP may also be referenced as

Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION

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Manufacturer Infineon Infineon
Product Category MOSFETs MOSFETs
RoHS - XON Y Y
Id - Continuous Drain Current 10 A 10 A
Vds - Drain-Source Breakdown Voltage 20 V 20 V
Rds On - Drain-Source Resistance 14.6 mOhms 14.6 mOhms
Transistor Polarity N - Channel N - Channel
Vgs th - Gate-Source Threshold Voltage 2.55 V 2.55 V
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Pd - Power Dissipation 2 W 2 W
Mounting Style Smd/Smt Smd/Smt
Package / Case SOIC - 8 SOIC - 8
Packaging Reel Reel
Technology Si Si
Number of Channels 2 Channel 2 Channel
Vgs - Gate-Source Voltage 20 V 20 V
Qg - Gate Charge 7.4 nC 7.4 nC
Configuration Dual Dual
Brand Infineon Infineon
Continuous Drain Current 10 A 10 A
Drain-Source Breakdown Voltage 20 V 20 V
Gate-Source Breakdown Voltage 20 V 20 V
Power Dissipation 2 W 2 W
Rds On 18.3 Mohms 18.3 Mohms
Gate Charge Qg 7.4 nC 7.4 nC
Factory Pack Quantity : 4000 4000
Height 1.75 mm 1.75 mm
Length 4.9 mm 4.9 mm
Transistor Type 2 N - Channel 2 N - Channel
Width 3.9 mm 3.9 mm
Forward Transconductance - Min 24 S 24 S
Cnhts 8541290000 8541290000
Fall Time 4.1 ns 4.1 ns
Hts Code 8541290095 8541290095
Mxhts 85412999 85412999
Product Type Mosfet Mosfet
Rise Time 10 ns 10 ns
Subcategory Mosfets Mosfets
Taric 8541290000 8541290000