PD - 93976B
REPETITIVE AVALANCHE AND dv/dt RATED IRF9140
HEXFET TRANSISTORS 100V, P-CHANNEL
THRU-HOLE (TO-204AA/AE)
Product Summary
Part Number BVDSS RDS(on) ID
IRF9140 -100V 0.2 -18A
The HEXFET technology is the key to International
Rectifiers advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
State of the Art design achieves: very low on-state resis-
TO-3
tance combined with high transconductance; superior re-
verse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well estab-
Features:
lished advantages of MOSFETs such as voltage control,
Repetitive Avalanche Ratings
very fast switching, ease of parelleling and temperature
Dynamic dv/dt Rating
stability of the electrical parameters.
Hermetically Sealed
They are well suited for applications such as switching
Simple Drive Requirements
power supplies, motor controls, inverters, choppers, audio
Ease of Paralleling
amplifiers and high energy pulse circuits.
Absolute Maximum Ratings
Parameter Units
I @ V = 0V, T = 25C Continuous Drain Current -18
D GS C
A
I @ V = 0V, T = 100C Continuous Drain Current -11
D GS C
I Pulsed Drain Current -72
DM
P @ T = 25C Max. Power Dissipation 125 W
D C
Linear Derating Factor 1.0 W/C
V Gate-to-Source Voltage 20 V
GS
E Single Pulse Avalanche Energy 500 mJ
AS
I Avalanche Current -18 A
AR
E Repetitive Avalanche Energy 12.5 mJ
AR
dv/dt Peak Diode Recovery dv/dt -5.5 V/ns
T Operating Junction -55 to 150
J
o
T Storage Temperature Range C
STG
Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s)
Weight 11.5(typical) g
For footnotes refer to the last page
www.irf.com 1
09/22/03IRF9140
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BV Drain-to-Source Breakdown Voltage -100 V V = 0V, I = -1.0mA
DSS GS D
BV /T Temperature Coefficient of Breakdown -0.087 V/C Reference to 25C, I = -1.0mA
DSS J D
Voltage
R Static Drain-to-Source On-State 0.2 V = -10V, I = -11A
DS(on) GS D
Resistance 0.23 V =-10V, I = -18A
GS D
V Gate Threshold Voltage -2.0 -4.0 V V = V , I = -250A
GS(th) DS GS D
g Forward Transconductance 6.2 S ( ) V > -15V, I = -11A
fs DS DS
I Zero Gate Voltage Drain Current -25 V = -80V, V =0V
DSS DS GS
-250 A V = -80V
DS
V = 0V, T = 125C
GS J
I Gate-to-Source Leakage Forward -100 V = -20V
GSS GS
I Gate-to-Source Leakage Reverse 100 n A V = 20V
GSS GS
Q Total Gate Charge 31 60 V =-10V, ID = -18A
g GS
Q Gate-to-Source Charge 3.7 13 nC V = -50V
gs DS
Q Gate-to-Drain (Miller) Charge 7.0 35.2
gd
t Turn-On Delay Time 35 V = -50V, I = -18A,
d(on) DD D
ns
t Rise Time 85 V =-10V, R = 9.1
r GS G
t Turn-Off Delay Time 85
d(off)
t Fall Time 65
f Measured from drain lead (6mm/
nH
L L Total Inductance 6.1 0.25in. from package) to source lead
S + D
(6mm/0.25in. from package)
C Input Capacitance 1400 V = 0V, V = -25V
iss GS DS
C Output Capacitance 600 pF f = 1.0MHz
oss
C Reverse Transfer Capacitance 200
rss
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
I Continuous Source Current (Body Diode) -18
S
A
I Pulse Source Current (Body Diode) -72
SM
V Diode Forward Voltage -5.0 V T = 25C, I =-18A, V = 0V
j
SD S GS
t Reverse Recovery Time 170 280 nS Tj = 25C, I = -18A, di/dt -100A/s
rr F
Q Reverse Recovery Charge 3.6 C V -50V
RR DD
t Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
on S D
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
R Junction-to-Case 1.0
thJC
C/W
R Junction-to-Ambient 30 Soldered to a 2 square copper-clad board
thJA
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
2 www.irf.com