IRF9321PbF HEXFET Power MOSFET V -30 V DS R DS(on) max 7.2 m ( V = -10V) GS R DS(on) max 11.2 m ( V = -4.5V) GS Q 34 nC g (typical) SO-8 I D -15 A ( T = 25C) A Applications Features and Benefits Features Resulting Benefits Industry-Standard SO-8 Package results in Multi-Vendor Compatibility RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier Orderable part number Package Type Standard Pack Note Form Quantity IRF9321PbF SO8 Tube/Bulk 95 IRF9321TRPbF SO8 Tape and Reel 4000 Absolute Maximum Ratings Max. Parameter Units V -30 Drain-to-Source Voltage DS V Gate-to-Source Voltage 20 V GS I T = 25C Continuous Drain Current, V -10V -15 GS D A Continuous Drain Current, V -10V -12 A I T = 70C A GS D -120 I Pulsed Drain Current DM Power Dissipation 2.5 P T = 25C D A W P T = 70C Power Dissipation 1.6 D A Linear Derating Factor 0.02 W/C T Operating Junction and -55 to + 150 J C T Storage Temperature Range STG Notes through are on page 2 www.irf.com 1 05/11/2010 Static T = 25C (unless otherwise specified) J Conditions Parameter Min. Typ. Max. Units BV V = 0V, I = -250A Drain-to-Source Breakdown Voltage -30 V GS D DSS Reference to 25C, I = -1mA V / T Breakdown Voltage Temp. Coefficient 0.021 V/C D DSS J V = -10V, I = -15A R 5.9 7.2 DS(on) GS D Static Drain-to-Source On-Resistance m V = -4.5V, I = -12A 9.3 11.2 GS D V V = V , I = -50A Gate Threshold Voltage -1.3 -1.8 -2.4 V GS(th) DS GS D V GS(th) Gate Threshold Voltage Coefficient -5.9 mV/C I V = -24V, V = 0V DSS Drain-to-Source Leakage Current -1.0 DS GS A V = -24V, V = 0V, T = 125C -150 DS GS J V = -20V I Gate-to-Source Forward Leakage -100 GS GSS nA V = 20V Gate-to-Source Reverse Leakage 100 GS V = -10V, I = -12A gfs Forward Transconductance 30 S DS D Q Total Gate Charge 34 nC V = -15V, V = -4.5V, I = - 12A g DS GS D Q Total Gate Charge 65 98 V = -10V g GS Q Gate-to-Source Charge 10 nC V = -15V gs DS Q I = -12A gd Gate-to-Drain Charge 16 D R Gate Resistance 18 G t V = -30V, V = -4.5V Turn-On Delay Time 21 DD GS d(on) t I = -1.0A Rise Time 79 D r ns t Turn-Off Delay Time 185 R = 6.8 d(off) G t Fall Time 145 See Figs. 19a & 19b f = 0V C Input Capacitance 2590 V iss GS C pF V = -25V oss Output Capacitance 590 DS C = 1.0MHz Reverse Transfer Capacitance 360 rss Avalanche Characteristics Parameter Typ. Max. Units E 310 Single Pulse Avalanche Energy mJ AS I -12 Avalanche Current A AR Diode Characteristics Conditions Parameter Min. Typ. Max. Units D I Continuous Source Current MOSFET symbol S -2.5 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM -120 S p-n junction diode. (Body Diode) V Diode Forward Voltage -1.2 V T = 25C, I = -2.5A, V = 0V SD J S GS t Reverse Recovery Time 38 57 ns T = 25C, I = -2.5A, V = -24V rr DD J F Q di/dt = 100/s Reverse Recovery Charge 24 36 nC rr Thermal Resistance Typ. Max. Parameter Units R Junction-to-Drain Lead 20 JL C/W R Junction-to-Ambient 50 JA Repetitive rating pulse width limited by max. junction temperature. Starting T = 25C, L = 4.3mH, R = 25 , I = -12A. J G AS Pulse width 400s duty cycle 2%. When mounted on 1 inch square copper board. R is measured at T of approximately 90C. J For DESIGN AID ONLY, not subject to production testing. 2 www.irf.com