X-On Electronics has gained recognition as a prominent supplier of IRFB3407ZPBF MOSFET across the USA, India, Europe, Australia, and various other global locations. IRFB3407ZPBF MOSFET are a product manufactured by Infineon. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

IRFB3407ZPBF Infineon

IRFB3407ZPBF electronic component of Infineon
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See Product Specifications
Part No.IRFB3407ZPBF
Manufacturer: Infineon
Category: MOSFET
Description: MOSFET TRENCH MOSFET - PACKAGE
Datasheet: IRFB3407ZPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 3.0469 ea
Line Total: USD 3.05

Availability - 4
Ships to you between
Fri. 28 Jun to Wed. 03 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
482 - WHS 1


Ships to you between Fri. 21 Jun to Thu. 27 Jun

MOQ : 1
Multiples : 1
1 : USD 1.1903

1698 - WHS 2


Ships to you between Fri. 21 Jun to Thu. 27 Jun

MOQ : 1
Multiples : 1
1 : USD 3.2555
10 : USD 2.6955
100 : USD 2.2054
250 : USD 2.0962
500 : USD 1.8119
1000 : USD 1.6087

4 - WHS 3


Ships to you between
Fri. 28 Jun to Wed. 03 Jul

MOQ : 1
Multiples : 1
1 : USD 3.0469
10 : USD 2.3082
50 : USD 1.8686
100 : USD 1.4249
500 : USD 1.2219
1000 : USD 1.1298

811 - WHS 4


Ships to you between Thu. 27 Jun to Mon. 01 Jul

MOQ : 1
Multiples : 1
1 : USD 2.3
10 : USD 1.955
100 : USD 1.587
250 : USD 1.5755
500 : USD 1.4835
1000 : USD 1.288
2000 : USD 1.288
5000 : USD 1.242

27160 - WHS 5


Ships to you between Fri. 21 Jun to Thu. 27 Jun

MOQ : 1000
Multiples : 1000
1000 : USD 1.4942

482 - WHS 6


Ships to you between Fri. 21 Jun to Thu. 27 Jun

MOQ : 7
Multiples : 1
7 : USD 1.1903

970 - WHS 7


Ships to you between Fri. 21 Jun to Thu. 27 Jun

MOQ : 31
Multiples : 1
31 : USD 1.339
50 : USD 1.3309
100 : USD 1.3
200 : USD 1.2967
500 : USD 1.2935
1000 : USD 1.2902

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Brand
Factory Pack Quantity :
Configuration
Height
Length
Transistor Type
Width
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 75 V V = 0V, I = 250 A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.094 V/C Reference to 25C, I = 5mA (BR)DSS J D R Static Drain-to-Source On-Resistance 5.0 6.4 V = 10V, I = 75A DS(on) m GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 150 A GS(th) DS GS D R Internal Gate Resistance 0.70 G(int) I Drain-to-Source Leakage Current 20 A V = 75V, V = 0V DSS DS GS 250 V = 75V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS Dynamic T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 320 S V = 50V, I = 75A DS D Q Total Gate Charge 79 110 I = 75A g D Q Gate-to-Source Charge 19 V = 38V gs DS nC Q Gate-to-Drain Mille) Charge 24 V = 10V gd GS Q Total Gate Charge Sync. (Q - Q ) 55 I = 75A, V =0V, V = 10V sync g gd D DS GS t Turn-On Delay Time 15 V = 49V d(on) DD t Rise Time 64 I = 75A r D ns t Turn-Off Delay Time 38 R = 2.6 d(off) G t Fall Time 65 V = 10V f GS C Input Capacitance 4750 V = 0V iss GS C Output Capacitance 420 V = 50V oss DS C Reverse Transfer Capacitance 190 = 1.0MHz rss pF C eff. (ER) 440 V = 0V, V = 0V to 60V oss Effective Output Capacitance (Energy Related) GS DS C eff. (TR) 410 V = 0V, V = 0V to 60V oss Effective Output Capacitance (Time Related) GS DS Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I Continuous Source Current MOSFET symbol D S 120 (Body Diode) showing the A G I Pulsed Source Current 488 integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 75A, V = 0V SD J S GS t Reverse Recovery Time 33 50 ns T = 25C V = 64V, rr J R T = 125C I = 75A 39 59 J F di/dt = 100A/ s Q T = 25C Reverse Recovery Charge 42 63 nC rr J T = 125C 56 84 J I Reverse Recovery Current 2.2 A T = 25C RRM J t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Calculated continuous current based on maximum allowable junction I 75A, di/dt 1570A/ s, V V , T 175C. SD DD (BR)DSS J temperature. Bond wire current limit is 120A. Note that current Pulse width 400 s duty cycle 2%. limitations arising from heating of the device leads may occur with C eff. (TR) is a fixed capacitance that gives the same charging time oss some lead mounting arrangements. as C while V is rising from 0 to 80% V . oss DS DSS Repetitive rating pulse width limited by max. junction C eff. (ER) is a fixed capacitance that gives the same energy as oss temperature. C while V is rising from 0 to 80% V . oss DS DSS Limited by T , starting T = 25C, L = 0.050mH Jmax J R is measured at T approximately 90C. J R = 25, I = 75A, V =10V. Part not recommended for use GS G AS above this value.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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