PD - 96216 IRFB4115GPbF HEXFET Power MOSFET Applications D V 150V DSS High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply R typ. 9.3m DS(on) High Speed Power Switching G max. 11m Hard Switched and High Frequency Circuits I 104A D (Silicon Limited) S Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness D Fully Characterized Capacitance and Avalanche SOA S Enhanced body diode dV/dt and dI/dt Capability D G Lead-Free Halogen-Free TO-220AB IRFB4115GPbF GD S Gate Drain Source Absolute Maximum Ratings Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 104 D C GS I T = 100C Continuous Drain Current, V 10V 74 A D C GS I Pulsed Drain Current 420 DM P T = 25C 380 Maximum Power Dissipation W D C Linear Derating Factor 2.5 W/C V 20 Gate-to-Source Voltage V GS dv/dt Peak Diode Recovery 18 V/ns T -55 to + 175 Operating Junction and J T Storage Temperature Range STG C Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting torque, 6-32 or M3 screw 10lbf in (1.1N m) Avalanche Characteristics E 220 Single Pulse Avalanche Energy mJ AS (Thermally limited) I See Fig. 14, 15, 22a, 22b Avalanche Current A AR E Repetitive Avalanche Energy mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 0.40 JC R Case-to-Sink, Flat Greased Surface 0.50 C/W CS R Junction-to-Ambient 62 JA www.irf.com 1 01/06/09 Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V V = 0V, I = 250A Drain-to-Source Breakdown Voltage 150 V (BR)DSS GS D V / T Reference to 25C, I = 3.5mA Breakdown Voltage Temp. Coefficient 0.18 V/C (BR)DSS J D R V = 10V, I = 62A Static Drain-to-Source On-Resistance 9.3 11 m DS(on) GS D V V = V , I = 250A Gate Threshold Voltage 3.0 5.0 V GS(th) DS GS D I V = 150V, V = 0V Drain-to-Source Leakage Current 20 A DSS DS GS V = 150V, V = 0V, T = 125C 250 DS GS J I V = 20V Gate-to-Source Forward Leakage 100 nA GSS GS V = -20V Gate-to-Source Reverse Leakage -100 GS R Internal Gate Resistance 2.3 G Dynamic T = 25C (unless otherwise specified) J Conditions Symbol Parameter Min. Typ. Max. Units V = 50V, I = 62A gfs Forward Transconductance 97 S DS D = 62A Q Total Gate Charge 77 120 nC I D g V = 75V Q Gate-to-Source Charge 28 DS gs Q V = 10V Gate-to-Drain Mille) Charge 26 gd GS Q Total Gate Charge Sync. (Q - Q ) I = 62A, V =0V, V = 10V 51 sync g gd D DS GS t V = 98V Turn-On Delay Time 18 ns d(on) DD t I = 62A Rise Time 73 r D t R = 2.2 Turn-Off Delay Time 41 d(off) G t V = 10V Fall Time 39 f GS C V = 0V Input Capacitance 5270 pF iss GS V = 50V C Output Capacitance 490 oss DS C Reverse Transfer Capacitance 105 = 1.0 MHz, See Fig. 5 rss V = 0V, V = 0V to 120V , See Fig. 11 C eff. (ER) Effective Output Capacitance (Energy Related) 460 GS DS oss V = 0V, V = 0V to 120V C eff. (TR) Effective Output Capacitance (Time Related) 530 GS DS oss Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions D I MOSFET symbol Continuous Source Current 104 A S (Body Diode) showing the G I Pulsed Source Current 420 A integral reverse SM S p-n junction diode. (Body Diode) T = 25C, I = 62A, V = 0V V Diode Forward Voltage 1.3 V SD J S GS t T = 25C V = 130V, Reverse Recovery Time 86 ns rr J R 110 T = 125C I = 62A J F Q Reverse Recovery Charge 300 nC T = 25C di/dt = 100A/s rr J 450 T = 125C J I Reverse Recovery Current 6.5 A T = 25C RRM J t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Repetitive rating pulse width limited by max. junction C eff. (TR) is a fixed capacitance that gives the same charging time oss temperature. as C while V is rising from 0 to 80% V . oss DS DSS Limited by T , starting T = 25C, L = 0.11mH Jmax J C eff. (ER) is a fixed capacitance that gives the same energy as oss R = 25, I = 62A, V =10V. Part not recommended for use G AS GS C while V is rising from 0 to 80% V . oss DS DSS above this value. I 62A, di/dt 1040A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 400s duty cycle 2%. 2 www.irf.com