IRFB4212PbF Features Key Parameters Key parameters optimized for Class-D audio V 100 V DS amplifier applications R typ. 10V m 72.5 DS(ON) Low R for improved efficiency DSON Q typ. 15 nC g Low Q and Q for better THD and improved G SW Q typ. 8.3 nC sw efficiency R typ. 2.2 G(int) Low Q for better THD and lower EMI RR T max 175 C J 175C operating junction temperature for ruggedness D Can deliver up to 150W per channel into 4 load in half-bridge topology G S TO-220AB Description This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175C operating junction temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for ClassD audio amplifier applications. Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 100 V DS V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V A 18 D C GS I T = 100C Continuous Drain Current, V 10V 13 D C GS Pulsed Drain Current I 57 DM Power Dissipation P T = 25C 60 W D C Power Dissipation P T = 100C 30 D C Linear Derating Factor 0.4 W/C T Operating Junction and -55 to + 175 C J T Storage Temperature Range STG Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting torque, 6-32 or M3 screw 10lb in (1.1N m) Thermal Resistance Parameter Typ. Max. Units Junction-to-Case R 2.5 JC R Case-to-Sink, Flat, Greased Surface 0.50 C/W CS Junction-to-Ambient R 62 JA Notes through are on page 2 www.irf.com 1 9/16/05 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 100 V V = 0V, I = 250A DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.09 V/C Reference to 25C, I = 1mA DSS J D m R Static Drain-to-Source On-Resistance 58 72.5 V = 10V, I = 13A DS(on) GS D V Gate Threshold Voltage 3.0 5.0 V V = V , I = 250A GS(th) DS GS D V /T Gate Threshold Voltage Coefficient -13 mV/C GS(th) J I Drain-to-Source Leakage Current 20 A V = 100V, V = 0V DSS DS GS 250 V = 100V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 200 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -200 V = -20V GS g Forward Transconductance 11 S V = 50V, I = 13A fs DS D Q Total Gate Charge 15 23 g Q Pre-Vth Gate-to-Source Charge 3.3 V = 80V gs1 DS Q Post-Vth Gate-to-Source Charge 1.4 nC V = 10V gs2 GS Q Gate-to-Drain Charge 6.9 I = 13A gd D Q Gate Charge Overdrive 3.4 See Fig. 6 and 19 godr Q Switch Charge (Q + Q ) 8.3 sw gs2 gd R Internal Gate Resistance 2.2 G(int) t Turn-On Delay Time 7.7 V = 50V, V = 10V d(on) DD GS t Rise Time 28 I = 13A r D t Turn-Off Delay Time 14 ns R = 2.5 d(off) G t Fall Time 3.9 f C Input Capacitance 550 V = 0V iss GS C Output Capacitance 66 pF V = 50V oss DS C Reverse Transfer Capacitance 35 = 1.0MHz, See Fig.5 rss C Effective Output Capacitance 350 V = 0V, V = 0V to 80V oss GS DS L Internal Drain Inductance 4.5 Between lead, D D nH 6mm (0.25in.) G L Internal Source Inductance 7.5 from package S S and center of die contact Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E 25 mJ AS Avalanche Current I See Fig. 14, 15, 17a, 17b A AR Repetitive Avalanche Energy E mJ AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions I T = 25C Continuous Source Current 18 MOSFET symbol S C (Body Diode) A showing the I Pulsed Source Current 57 integral reverse SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 13A, V = 0V SD J S GS t Reverse Recovery Time 41 62 ns T = 25C, I = 13A rr J F Q Reverse Recovery Charge 69 100 nC di/dt = 100A/s rr Repetitive rating pulse width limited by max. junction temperature. R is measured at Starting T = 25C, L = 0.32mH, R = 25, I = 13A. J G AS Limited by Tjmax. See Figs. 14, 15, 17a, 17b for repetitive Pulse width 400s duty cycle 2%. avalanche information 2 www.irf.com