PD - 96215 IRFB4321GPbF Applications HEXFET Power MOSFET Motion Control Applications V 150V High Efficiency Synchronous Rectification in SMPS DSS Uninterruptible Power Supply R typ. 12m DS(on) Hard Switched and High Frequency Circuits 15m max. I 83A D Benefits Low R Reduces Losses DSON Low Gate Charge Improves the Switching D D Performance Improved Diode Recovery Improves Switching & EMI Performance S 30V Gate Voltage Rating Improves Robustness D G G Fully Characterized Avalanche SOA Lead-Free TO-220AB S Halogen-Free IRFB4321GPbF GD S Gate Drain Source Absolute Maximum Ratings Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 83 D C GS I T = 100C Continuous Drain Current, V 10V 59 A D C GS I Pulsed Drain Current 330 DM P T = 25C 330 W D C Maximum Power Dissipation Linear Derating Factor 2.2 W/C V Gate-to-Source Voltage 30 V GS Single Pulse Avalanche Energy E 120 mJ AS (Thermally limited) T Operating Junction and -55 to + 175 J T Storage Temperature Range STG C Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting torque, 6-32 or M3 screw 10lbf in (1.1N m) Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case R 0.45 JC R Case-to-Sink, Flat, Greased Surface 0.50 C/W CS R Junction-to-Ambient 62 JA www.irf.com 1 01/06/09 Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 150 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 150 mV/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 12 15 V = 10V, I = 33A DS(on) m GS D V Gate Threshold Voltage 3.0 5.0 V V = V , I = 250A GS(th) DS GS D I Drain-to-Source Leakage Current 20 A V = 150V, V = 0V DSS DS GS 1.0 mA V = 150V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS R Internal Gate Resistance 0.8 G(int) Dynamic T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 130 S V = 25V, I = 50A DS D Q Total Gate Charge 71 110 nC I = 50A g D Q Gate-to-Source Charge 24 V = 75V gs DS Q Gate-to-Drain Mille) Charge 21 V = 10V gd GS t Turn-On Delay Time 18 ns V = 75V d(on) DD t Rise Time 60 I = 50A r D t Turn-Off Delay Time 25 R = 2.5 d(off) G t Fall Time 35 V = 10V f GS C Input Capacitance pF V = 0V 4460 iss GS C Output Capacitance V = 25V 390 oss DS C Reverse Transfer Capacitance = 1.0MHz 82 rss Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions 83 I D Continuous Source Current A MOSFET symbol S (Body Diode) showing the G I Pulsed Source Current 330 A integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 50A, V = 0V SD J S GS t Reverse Recovery Time 89 130 ns I = 50A rr D Q Reverse Recovery Charge 300 450 nC V = 128V, rr R di/dt = 100A/s I Reverse Recovery Current 6.5 A RRM t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Calculated continuous current based on maximum allowable Pulse width 400s duty cycle 2%. junction temperature. Repetitive rating pulse width limited by max. junction temperature. Limited by T , starting T = 25C, L = 0.095mH Jmax J R = 25, I = 50A, V =10V. Part not recommended for use GS G AS above this value. 2 www.irf.com