PD -97693 IRFB812PbF HEXFET Power MOSFET Applications Trr typ. V R typ. I DSS DS(on) D % 500V 1.75 75ns 3.6A Features and Benefits TO-220AB Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 3.6 D C GS I T = 100C Continuous Drain Current, V 10V 2.3 A D C GS Pulsed Drain Current I 14.4 DM P T = 25C Power Dissipation 78 W D C Linear Derating Factor 0.63 W/C V Gate-to-Source Voltage 20 V GS dv/dt Peak Diode Recovery dv/dt 32 V/ns T Operating Junction and -55 to + 150 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds 300 (1.6mm from case ) 10lb in (1.1N m) Mounting torque, 6-32 or M3 screw Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current 3.6 MOSFET symbol S (Body Diode) A showing the G I Pulsed Source Current 14.4 integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.2 V T = 25C, I = 3.6A, V = 0V SD J S GS t Reverse Recovery Time 75 110 ns T = 25C, I = 3.6A rr J F 94 140 T = 125C, di/dt = 100A/s J Q Reverse Recovery Charge 135 200 nC T = 25C, I = 3.6A, V = 0V rr J S GS 220 330 T = 125C, di/dt = 100A/s J I Reverse Recovery Current 3.2 4.8 A T = 25C RRM J t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Notes through are on page 2 www.irf.com 1 6/23/11 Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 500 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.37 V/C Reference to 25C, I = 250A (BR)DSS J D R Static Drain-to-Source On-Resistance 1.75 2.2 V = 10V, I = 2.2A DS(on) GS D V Gate Threshold Voltage 3.0 5.0 V V = V , I = 250 A GS(th) DS GS D I Drain-to-Source Leakage Current 25 A V = 500V, V = 0V DSS DS GS 2.0 mA V = 400V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS Dynamic T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 7.6 S V = 50V, I = 2.2A DS D Q Total Gate Charge 20 I = 3.6A g D Q Gate-to-Source Charge 7.3 nC V = 400V gs DS Q Gate-to-Drain Mille) Charge 7.1 V = 10V, See Fig.14a &14b gd GS t Turn-On Delay Time 14 V = 250V d(on) DD t Rise Time 22 ns I = 3.6A r D t Turn-Off Delay Time 24 R = 17 d(off) G t Fall Time 17 V = 10V, See Fig. 15a & 15b f GS C Input Capacitance 810 V = 0V iss GS C Output Capacitance 47 V = 25V oss DS C Reverse Transfer Capacitance 7.3 = 1.0MHz, See Fig. 5 rss C Output Capacitance 610 pF V = 0V, V = 1.0V, = 1.0MHz oss GS DS C Output Capacitance 16 V = 0V, V = 400V, = 1.0MHz oss GS DS C eff. Effective Output Capacitance 5.9 V = 0V,V = 0V to 400V oss GS DS eff. (ER) Effective Output Capacitance 37 C oss (Energy Related) Avalanche Characteristics Symbol Parameter Typ. Max. Units Single Pulse Avalanche Energy E 150 mJ AS Avalanche Current I 1.8 A AR Repetitive Avalanche Energy E 7.8 mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case R 1.6 JC R Case-to-Sink, Flat, Greased Surface 0.5 C/W CS Junction-to-Ambient R 62 JA Pulse width 300s duty cycle 2%. Repetitive rating pulse width limited by C eff. is a fixed capacitance that gives the same charging time oss max. junction temperature. (See Fig. 11) as C while V is rising from 0 to 80% V . oss DS DSS Starting T = 25C, L = 93mH, R = 25, J G C eff.(ER) is a fixed capacitance that stores the same energy oss I = 1.8A. (See Figure 13). AS as C while V is rising from 0 to 80% V . oss DS DSS I = 3.6A, di/dt 520A/s, V V , SD DD (BR)DSS T 150C. J 2 www.irf.com