PD - 90553C IRFF9220 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6847 HEXFET TRANSISTORS JANTXV2N6847 THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/563 200V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF9220 -200V 1.5 -2.5A The HEXFET technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest State of the Art design achieves: very low on-state resis- TO-39 tance combined with high transconductance. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as volt- Features: age control, very fast switching, ease of parelleling Repetitive Avalanche Ratings and temperature stability of the electrical parameters. Dynamic dv/dt Rating They are well suited for applications such as switch- Hermetically Sealed ing power supplies, motor controls, inverters, chop- Simple Drive Requirements pers, audio amplifiers and high energy pulse circuits. Ease of Paralleling Absolute Maximum Ratings Parameter Units I V = -10V, T = 25C Continuous Drain Current -2.5 D GS C A I V = -10V, T = 100C Continuous Drain Current -1.6 D GS C I Pulsed Drain Current -10 DM P T = 25C Max. Power Dissipation 20 W D C Linear Derating Factor 0.16 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy 180 mJ AS I Avalanche Current A AR E Repetitive Avalanche Energy mJ AR dv/dt Peak Diode Recovery dv/dt -5.0 V/ns T Operating Junction -55 to 150 J o T Storage Temperature Range C STG Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s) Weight 0.98(typical) g For footnotes refer to the last page www.irf.com 1 01/22/01IRFF9220 Electrical Characteristics Tj = 25C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BV Drain-to-Source Breakdown Voltage -200 V V = 0V, I = -1.0mA DSS GS D BV / T Temperature Coefficient of Breakdown -0.22 V/C Reference to 25C, I = -1.0mA DSS J D Voltage R Static Drain-to-Source On-State 1.5 V = -10V, I = -1.6A DS(on) GS D Resistance 1.725 V =-10V, I =-2.5A GS D V Gate Threshold Voltage -2.0 -4.0 V V = V , I = -250 A GS(th) DS GS D g Forward Transconductance 1.0 S ( ) V > -15V, I = -1.6A fs DS DS I Zero Gate Voltage Drain Current -25 V = -160V, V =0V DSS DS GS -250 A V = -160V DS V = 0V, T = 125C GS J I Gate-to-Source Leakage Forward -100 V = -20V GSS GS I Gate-to-Source Leakage Reverse 100 nA V = 20V GSS GS Q Total Gate Charge 4.0 15 V =-10V, ID = -2.5A g GS Q Gate-to-Source Charge 1.1 3.2 nC V = -100V gs DS Q Gate-to-Drain (Miller) Charge 0.8 8.4 gd t Turn-On Delay Time 50 V = -100V, I = -2.5A, d(on) DD D t Rise Time 70 R =7.5 r G ns t Turn-Off Delay Time 40 d(off) t Fall Time 50 f L L Total Inductance 7.0 Measured from drain lead (6mm/0.25in. from S + D nH package) to source lead (6mm/0.25in. from package) C Input Capacitance 330 V = 0V, V = -25V iss GS DS C Output Capacitance 100 pF f = 1.0MHz oss C Reverse Transfer Capacitance 33 rss Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions I Continuous Source Current (Body Diode) -2.5 S A I Pulse Source Current (Body Diode) -10 SM V Diode Forward Voltage -4.8 V T = 25C, I =-2.5A, V = 0V j SD S GS t Reverse Recovery Time 300 nS Tj = 25C, I = -2.5.A, di/dt -100A/ s rr F Q Reverse Recovery Charge 3.0 C V -50V RR DD t Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L . on S D Thermal Resistance Parameter Min Typ Max Units Test Conditions R Junction-to-Case 6.25 thJC C/W R Junction-to-Ambient 175 Typical socket mount thJA Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com