FastIRFET IRFH4213DPbF HEXFET Power MOSFET V 25 V DSS R max DS(on) 1.35 ( V = 10V) GS m ( V = 4.5V) 1.90 GS Qg 25 nC (typical) I D 100 A PQFN 5X6 mm ( T = 25C) C (Bottom) Applications Synchronous Rectifier MOSFET for Synchronous Buck Converters Features Benefits Low R (<1.35m ) Lower Conduction Losses DSon Schottky Intrinsic Diode with Low Forward Voltage Lower Switching Losses Low Thermal Resistance to PCB (<1.3C/W) Enable better thermal dissipation Low Profile (<0.9 mm) results in Increased Power Density Industry-Standard Pinout Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easie r Manufacturing RoHS Compliant, Halogen-Free Environmentally Friendlier MSL1, Industrial Qualification Increased Reliability Base part number Package Type Standard Pack Orderable Part Number Form Quantity IRFH4213DPbF PQFN 5mm x 6 mm Tape and Reel 4000 IRFH4213DTRPbF Absolute Maximum Ratings Parameter Max. Units V Gate-to-Source Voltage 20 V GS I T = 25C Continuous Drain Current, V 10V 40 D A GS I T = 25C Continuous Drain Current, V 10V 208 D C(Bottom) GS I T = 100C Continuous Drain Current, V 10V 131 D C(Bottom) GS A I T = 25C Continuous Drain Current, V 10V 100 D C(Bottom) GS (Source Bonding Technology Limited) I Pulsed Drain Current 400 DM P T = 25C Power Dissipation 3.6 D A W P T = 25C Power Dissipation 96 D C(Bottom) Linear Derating Factor 0.029 W/C T Operating Junction and -55 to + 150 J C T Storage Temperature Range STG Notes through are on page 8 1 www.irf.com 2015 International Rectifier Submit Datasheet Feedback March 19, 2015 IRFH4213DPbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 25 V V = 0V, I = 1.0mA DSS GS D Breakdown Voltage Temp. Coefficient 21 mV/C Reference to 25C, I = 10mA BV /T D DSS J R Static Drain-to-Source On-Resistance 1.10 1.35 V = 10V, I = 50A DS(on) GS D m 1.50 1.90 V = 4.5V, I = 50A GS D V Gate Threshold Voltage 1.1 1.6 2.1 V V = V , I = 100A GS(th) DS GS D Gate Threshold Voltage Coefficient -4.5 mV/C V = V , I = 10mA V GS(th) DS GS D I Drain-to-Source Leakage Current 250 A V = 20V, V = 0V DSS DS GS I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 340 S V = 10V, I = 50A DS D Q Total Gate Charge 55 nC V = 10V, V = 13V, I = 50A g GS DS D Q Total Gate Charge 25 38 g V = 13V Q Pre-Vth Gate-to-Source Charge 9.4 gs1 DS Q Post-Vth Gate-to-Source Charge 4.1 nC V = 4.5V gs2 GS Q Gate-to-Drain Charge 9.4 I = 50A D gd Q Gate Charge Overdrive 2.1 godr Q Switch Charge (Q + Q) 13.5 sw gs2 gd Q Output Charge 27 nC V = 16V, V = 0V oss DS GS R Gate Resistance 1.5 G t Turn-On Delay Time 14 V = 13V, V = 4.5V d(on) DD GS t Rise Time 30 ns I = 50A r D t Turn-Off Delay Time 18 R =2.0 d(off) G t Fall Time 12 f C Input Capacitance 3520 V = 0V iss GS pF V = 13V C Output Capacitance 1070 oss DS C Reverse Transfer Capacitance 250 = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. E Single Pulse Avalanche Energy 180 AS I Avalanche Current 50 AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 100 (Body Diode) showing the G A integral reverse I Pulsed Source Current SM S 400 (Body Diode) p-n junction diode. V Diode Forward Voltage 0.8 V T = 25C, I = 50A, V = 0V SD J S GS t Reverse Recovery Time 26 37 ns T = 25C, I = 50A, V = 13V rr J F DD Q Reverse Recovery Charge 35 53 nC di/dt = 260A/s rr Thermal Resistance Parameter Typ. Max. Units Junction-to-Case 1.3 R (Bottom) JC C/W R (Top) Junction-to-Case 21 JC R Junction-to-Ambient 35 JA R (<10s) Junction-to-Ambient 21 JA 2 www.irf.com 2015 International Rectifier Submit Datasheet Feedback March 19, 2015