IRFH5053PbF Applications HEXFET Power MOSFET 3 Phase Boost Converter Applications V R max Qg DSS DS(on) Secondary Side Synchronous Rectification 18m V = 10V 100V 24nC GS Benefits Very low R at 10V V DS(ON) GS Low Gate Charge Fully Characterized Avalanche Voltage and Current 100% Tested for R G Lead-Free (Qualified up to 260C Reflow) RoHS compliant (Halogen Free) PQFN Low Thermal Resistance Large Source Lead for more reliable Soldering Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 100 DS V V Gate-to-Source Voltage 20 GS Continuous Drain Current, V 10V I T = 25C GS 9.3 D A 10V I T = 70C Continuous Drain Current, V 7.4 A GS D A I T = 25C Continuous Drain Current, V 10V GS 46 D C Pulsed Drain Current I 75 DM Power Dissipation P T = 25C 3.1 A D W Power Dissipation P T = 70C 2.0 D A W/C Linear Derating Factor 0.025 T Operating Junction and -55 to + 150 J C T Storage Temperature Range STG Thermal Resistance Parameter Typ. Max. Units Junction-to-Case R 1.6 JC C/W Junction-to-Ambient R JA 40 Notes through are on page 9 www.irf.com 1 12/16/08 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 100 V V = 0V, I = 250A DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.11 V/C Reference to 25C, I = 1mA DSS J D R Static Drain-to-Source On-Resistance 14.4 18 V = 10V, I = 9.3A DS(on) m GS D V GS(th) Gate Threshold Voltage 3.0 3.7 4.9 V V = V , I = 100A DS GS D V GS(th) Gate Threshold Voltage Coefficient -11 mV/C I DSS Drain-to-Source Leakage Current 20 V = 80V, V = 0V DS GS A 250 V = 80V, V = 0V, T = 125C DS GS J I GSS Gate-to-Source Forward Leakage 100 V = 20V GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 19 S V = 50V, I = 7.4A DS D Q Total Gate Charge 24 36 g Q gs1 Pre-Vth Gate-to-Source Charge 5.2 V = 50V DS Q gs2 Post-Vth Gate-to-Source Charge 1.5 V = 10V GS nC Q gd Gate-to-Drain Charge 8.6 I = 7.4A D Q godr Gate Charge Overdrive 8.7 See Fig.17 & 18 Q Switch Charge (Q + Q ) sw gs2 gd 10.1 Q Output Charge 12 nC V = 16V, V = 0V oss DS GS R Gate Resistance 0.8 G t Turn-On Delay Time 12 V = 50V, V = 10V d(on) DD GS t r Rise Time 7.5 I = 7.4A D ns t d(off) Turn-Off Delay Time 18 R =1.8 G t f Fall Time 4.1 See Fig.15 C iss Input Capacitance 1510 V = 0V GS C oss Output Capacitance 230 pF V = 50V DS C rss Reverse Transfer Capacitance 59 = 1.0MHz Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E 21 mJ AS Avalanche Current I 7.4 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions I D S Continuous Source Current MOSFET symbol 2.8 (Body Diode) showing the A I G SM Pulsed Source Current integral reverse 75 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 7.4A, V = 0V SD J S GS t Reverse Recovery Time 31 47 ns T = 25C, I = 7.4A, V = 50V rr J F DD Q di/dt = 800A/s See Fig.16 Reverse Recovery Charge 210 320 nC rr t Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Forward Turn-On Time 2 www.irf.com