IRFH5104PbF HEXFET Power MOSFET V 40 V DS R DS(on) max 3.5 m ( V = 10V) GS Q 53 g (typical) nC R 1.4 G (typical) I D 100 A ( T = 25C) PQFN 5X6 mm c(Bottom) Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Features Benefits Low R ( 3.5m ) Lower Conduction Losses DSon Low Thermal Resistance to PCB ( 1.1C/W) Enables better thermal dissipation 100% Rg tested Increased Reliability Low Profile ( 0.9 mm) results in Increased Power Density Industry-Standard Pinout Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier MSL1, Industrial Qualification Increased Reliability Orderable part number Package Type Standard Pack Note Form Quantity IRFH5104TRPBF PQFN 5mm x 6mm Tape and Reel 4000 IRFH5104TR2PBF PQFN 5mm x 6mm Tape and Reel 1000 Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 40 DS V V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V 24 D A GS I T = 70C Continuous Drain Current, V 10V 19 D A GS I T = 25C Continuous Drain Current, V 10V 100 A D C(Bottom) GS I T = 100C Continuous Drain Current, V 10V 86 D C(Bottom) GS Pulsed Drain Current I 400 DM Power Dissipation P T = 25C 3.6 D A W Power Dissipation P T = 25C 114 D C(Bottom) Linear Derating Factor 0.029 W/C T Operating Junction and -55 to + 150 J C T Storage Temperature Range STG Notes through are on page 8 www.irf.com 1 01/03/2011 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 40 V V = 0V, I = 250A DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.05 V/C Reference to 25C, I = 1mA DSS J D R Static Drain-to-Source On-Resistance 2.9 3.5 m V = 10V, I = 50A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V GS(th) V = V , I = 100A DS GS D V Gate Threshold Voltage Coefficient -8.9 mV/C GS(th) I Drain-to-Source Leakage Current 20 V = 40V, V = 0V DSS DS GS A 250 V = 40V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 56 S V = 15V, I = 50A DS D Q Total Gate Charge 53 80 g Q Pre-Vth Gate-to-Source Charge 10 V = 20V gs1 DS Q Post-Vth Gate-to-Source Charge 4.8 V = 10V gs2 GS nC Q Gate-to-Drain Charge 19 I = 50A gd D Q Gate Charge Overdrive 19.2 See Fig.17 & 18 godr Q Switch Charge (Q + Q ) 23.8 sw gs2 gd Q Output Charge 22 nC V = 16V, V = 0V oss DS GS R Gate Resistance 1.4 G t Turn-On Delay Time 9.5 V = 20V, V = 10V d(on) DD GS t Rise Time 15 I = 50A r D ns t Turn-Off Delay Time 20 R =1.7 d(off) G t Fall Time 10 See Fig.15 f C Input Capacitance 3120 V = 0V iss GS C Output Capacitance 650 pF V = 25V oss DS C Reverse Transfer Capacitance 310 = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E 120 mJ AS Avalanche Current I 50 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current MOSFET symbol D S 100 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 400 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 50A, V = 0V SD J S GS t Reverse Recovery Time 31 47 ns T = 25C, I = 50A, V = 20V rr J F DD Q Reverse Recovery Charge 130 195 nC di/dt = 500A/s rr t Forward Turn-On Time Time is dominated by parasitic Inductance on Thermal Resistance Parameter Typ. Max. Units Junction-to-Case (Bottom) R 1.1 JC Junction-to-Case R (Top) 15 JC C/W Junction-to-Ambient R 35 JA Junction-to-Ambient R (<10s) 22 JA 2 www.irf.com