IRFH5220PbF HEXFET Power MOSFET V 200 V DS R DS(on) max 99.9 m ( V = 10V) GS Q 20 g (typical) nC R 2.3 G (typical) I D 20 A PQFN 5X6 mm ( T = 25C) c(Bottom) Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Benefits Features Low R Lower Conduction Losses DSon Low Thermal Resistance to PCB ( 1.2C/W) Enable better thermal dissipation 100% Rg tested Increased Reliability Low Profile ( 0.9 mm) results in Increased Power Density Industry-Standard Pinout Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier MSL1, Industrial Qualification Increased Reliability Orderable part number Package Type Standard Pack Note Form Quantity IRFH5220TRPBF PQFN 5mm x 6mm Tape and Reel 4000 IRFH5220TR2PBF PQFN 5mm x 6mm Tape and Reel 400 Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 200 DS V V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V 3.8 D A GS I T = 70C Continuous Drain Current, V 10V 3.0 D A GS I T = 25C Continuous Drain Current, V 10V 20 D C(Bottom) GS I T = 100C Continuous Drain Current, V 10V A 13 D C(Bottom) GS I T = 25C Continuous Drain Current, V 10V 5.8 D C(Top) GS I T = 100C Continuous Drain Current, V 10V 3.7 D C(Top) GS Pulsed Drain Current I 47 DM Power Dissipation P T = 25C 3.6 D A W Power Dissipation P T = 25C 8.3 D C(Top) Linear Derating Factor 0.07 W/C T Operating Junction and -55 to + 150 J C T Storage Temperature Range STG Notes through are on page 8 www.irf.com 1 12/21/10 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 200 V V = 0V, I = 250 A DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.21 V/C Reference to 25C, I = 1mA DSS J D R Static Drain-to-Source On-Resistance 80 99.9 V = 10V, I = 5.8A m DS(on) GS D V Gate Threshold Voltage 3.0 5.0 V GS(th) V = V , I = 100 A DS GS D V Gate Threshold Voltage Coefficient -11 mV/C GS(th) I Drain-to-Source Leakage Current 20 = 200V, V = 0V A V DSS DS GS 1.0 mA V = 200V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 16 S V = 50V, I = 5.8A DS D Q Total Gate Charge 20 30 g Q Pre-Vth Gate-to-Source Charge 5.4 V = 100V gs1 DS Q Post-Vth Gate-to-Source Charge 1.3 V = 10V gs2 GS nC Q Gate-to-Drain Charge 6.3 I = 5.8A gd D Q Gate Charge Overdrive 7.0 See Fig.17 & 18 godr Q Switch Charge (Q + Q ) 7.6 sw gs2 gd Q Output Charge 9.4 nC V = 16V, V = 0V oss DS GS R Gate Resistance 2.3 G t Turn-On Delay Time 7.2 V = 100V, V = 10V d(on) DD GS t Rise Time 4.7 I = 5.8A r D ns t Turn-Off Delay Time 14 R =1.8 d(off) G t Fall Time 3.4 See Fig.15 f C Input Capacitance 1380 V = 0V iss GS C Output Capacitance 100 pF V = 50V oss DS C Reverse Transfer Capacitance 23 = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E 290 mJ AS Avalanche Current I 5.8 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 5.8 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 47 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 5.8A, V = 0V SD J S GS t Reverse Recovery Time 39 59 ns T = 25C, I = 5.8A, V = 100V rr J F DD di/dt = 500A/s Q Reverse Recovery Charge 355 530 nC rr t Forward Turn-On Time Time is dominated by parasitic Inductance on Thermal Resistance Parameter Typ. Max. Units R (Bottom)Junction-to-Case 1.2 JC Junction-to-Case R (Top) 15 C/W JC Junction-to-Ambient R 35 JA Junction-to-Ambient R (<10s) 22 JA 2 www.irf.com