IRFH5302PbF HEXFET Power MOSFET V 30 V DS R DS(on) max 2.1 m ( V = 10V) GS Q 29 g (typical) nC R 1.6 G (typical) I D 100 A ( T = 25C) c(Bottom) PQFN 5X6 mm Applications OR-ing MOSFET for 12V (typical) Bus in-Rush Current Synchronous MOSFET for buck converters Battery Operated DC Motor Inverter MOSFET Features and Benefits Benefits Features ) Low R ( 2.1m Lower Conduction Losses DSon Low Thermal Resistance to PCB ( 1.2C/W) Enable better thermal dissipation 100% Rg tested Increased Reliability Low Profile ( 0.9 mm) results in Increased Power Density Industry-Standard Pinout Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier MSL1, Industrial Qualification Increased Reliability Orderable part number Package Type Standard Pack Note Form Quantity IRFH5302TRPBF PQFN 5mm x 6mm Tape and Reel 4000 IRFH5302TR2PBF PQFN 5mm x 6mm Tape and Reel 400 Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 30 DS V V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V 32 D A GS I T = 70C Continuous Drain Current, V 10V 26 D A GS I T = 25C Continuous Drain Current, V 10V 100 A D C(Bottom) GS I T = 100C Continuous Drain Current, V 10V 100 D C(Bottom) GS Pulsed Drain Current I 400 DM P T = 25C Power Dissipation 3.6 D A W P T = 25C Power Dissipation 100 D C(Bottom) Linear Derating Factor 0.029 W/C T Operating Junction and -55 to + 150 J C T Storage Temperature Range STG Notes through are on page 8 www.irf.com 1 10/20/09 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A GS D DSS V /T Breakdown Voltage Temp. Coefficient 0.02 V/C Reference to 25C, I = 1mA DSS J D R Static Drain-to-Source On-Resistance 1.8 2.1 V = 10V, I = 50A DS(on) GS D m V = 4.5V, I = 50A 2.8 3.5 GS D V Gate Threshold Voltage 1.35 1.8 2.35 V GS(th) V = V , I = 100A DS GS D V Gate Threshold Voltage Coefficient -6.8 mV/C GS(th) I Drain-to-Source Leakage Current 5.0 V = 24V, V = 0V DSS DS GS A V = 24V, V = 0V, T = 125C 150 DS GS J V = 20V I Gate-to-Source Forward Leakage 100 GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 180 S V = 15V, I = 50A DS D Q Total Gate Charge 76 nC V = 10V, V = 15V, I = 50A g GS DS D Q Total Gate Charge 29 41 g V = 15V Q Pre-Vth Gate-to-Source Charge 7.7 DS gs1 Q Post-Vth Gate-to-Source Charge 4.4 V = 4.5V GS gs2 nC Q Gate-to-Drain Charge 9.7 I = 50A gd D Q Gate Charge Overdrive 8.2 See Fig.17 & 18 godr Q Switch Charge (Q + Q ) 14 sw gs2 gd Q Output Charge 19 nC V = 16V, V = 0V oss DS GS R Gate Resistance 1.6 G 2.5 t Turn-On Delay Time 18 V = 15V, V = 4.5V d(on) DD GS I = 50A t Rise Time 51 r D ns t Turn-Off Delay Time 22 R =1.8 d(off) G t Fall Time 18 See Fig.15 f C Input Capacitance 4400 V = 0V GS iss Output Capacitance 890 pF V = 15V C oss DS C Reverse Transfer Capacitance 360 = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E 130 mJ AS Avalanche Current I 50 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 100 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 400 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.0 V T = 25C, I = 50A, V = 0V J S GS SD t Reverse Recovery Time 20 30 ns T = 25C, I = 50A, V = 15V rr J F DD Q Reverse Recovery Charge 32 48 nC di/dt = 300A/s rr t Forward Turn-On Time Time is dominated by parasitic Inductance on Thermal Resistance Parameter Typ. Max. Units Junction-to-Case R (Bottom) 1.2 JC R (Top) Junction-to-Case 15 C/W JC Junction-to-Ambient R 35 JA Junction-to-Ambient R (<10s) 22 JA 2 www.irf.com