HEXFET Power MOSFET Applications Brushed Motor drive applications V 40V DSS BLDC Motor drive applications typ.2.5m R DS(on) PWM Inverterized topologies max. 3.3m Battery powered circuits I 117A Half-bridge and full-bridge topologies D (Silicon Limited) Synchronous rectifier applications I 85A D (Package Limited) Resonant mode power supplies OR-ing and redundant power switches DC/DC and AC/DC converters Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability PQFN 5X6 mm RoHS Compliant containing no Lead, no Bromide, and no Halogen Base Part Number Package Type Standard Pack Orderable part number Note Form Quantity IRFH7446PBF PQFN 5mm x 6mm Tape and Reel 4000 IRFH7446TRPBF PQFN 5mm x 6mm Tape and Reel 400 IRFH7446TR2PBF EOL notice 259 8.0 125 I = 50A D Limited By Package 7.0 100 6.0 75 5.0 T = 125C J 4.0 50 3.0 25 2.0 T = 25C J 1.0 0 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150 T , Case Temperature (C) V Gate -to -Source Voltage (V) C GS, Fig 2. Maximum Drain Current vs. Case Temperature Fig 1. Typical On-Resistance vs. Gate Voltage rain-to Resist R , D -Source On ance (m ) DS(on) I , Drain Current (A) D Absolute Maximum Ratings Symbol Parameter Max. Units 117 I T = 25C Continuous Drain Current, V 10V (Silicon Limited) D C GS 74 I T = 100C Continuous Drain Current, V 10V (Silicon Limited) D C GS A 85 I T = 25C Continuous Drain Current, V 10V (Package Limited) D C GS Pulsed Drain Current 468 I DM Maximum Power Dissipation 78 P T = 25C W D C Linear Derating Factor 0.63 W/C Gate-to-Source Voltage 20 V V GS Operating Junction and -55 to + 150 T J C Storage Temperature Range T STG Avalanche Characteristics Single Pulse Avalanche Energy E 78 AS (Thermally limited) mJ Single Pulse Avalanche Energy 152 E AS (Thermally limited) Avalanche Current I See Fig. 14, 15, 22a, 22b A AR Repetitive Avalanche Energy mJ E AR Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case 1.6 R (Bottom) JC Junction-to-Case R (Top) 31 JC C/W Junction-to-Ambient R 35 JA Junction-to-Ambient R (<10s) 23 JA Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 40 V V = 0V, I = 250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.032 V/C Reference to 25C, I = 1.0mA (BR)DSS J D m R Static Drain-to-Source On-Resistance 2.5 3.3 V = 10V, I = 50A DS(on) GS D m 3.8 V = 6.0V, I = 50A GS D V Gate Threshold Voltage 2.2 3.9 V V = V , I = 100A GS(th) DS GS D I Drain-to-Source Leakage Current 1.0 A V = 40V, V = 0V DSS DS GS 150 V = 40V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS R Internal Gate Resistance 1.5 G Calculated continuous current based on maximum allowable Pulse width 400s duty cycle 2%. junction temperature. Current is limited to 85A by source bond C eff. (TR) is a fixed capacitance that gives the same charging time oss technology. Note that current limitations arising from heating of as C while V is rising from 0 to 80% V . oss DS DSS the device leads may occur with some lead mounting C eff. (ER) is a fixed capacitance that gives the same energy as oss arrangements. C while V is rising from 0 to 80% V . oss DS DSS Repetitive rating pulse width limited by max. junction When mounted on 1 inch square 2 oz copper pad on 1.5 x 1.5 in. board of FR-4 material. temperature. Limited by T , starting T = 25C, L = 0.062mH Jmax J Limited by T , starting T = 25C, L = 1mH, R = 50 , I = 18A,V =10V GS Jmax J G AS R = 50 , I = 50A, V =10V. G AS GS I 50A, di/dt 1123A/s, V V , T 150C. SD DD (BR)DSS J