HEXFET Power MOSFET Applications High Frequency Point-of-Load Synchronous Buck V R max Qg DSS DS(on) Converter for Applications in Neworking & Computing Systems 8.5m V = 10V 30V 9.3nC GS Optimized for Control FET Applications Benefits Very low R at 4.5V V DS(ON) GS Low Gate Charge Fully Characterized Avalanche Voltage and Current 100% Tested for R G Lead-Free (Qualified up to 260C Reflow) PQFN 5X6 mm RoHS compliant (Halogen Free) Low Thermal Resistance Large Source Lead for more reliable Soldering Absolute Maximum Ratings Parameter Max. Units V DS Drain-to-Source Voltage 30 V V Gate-to-Source Voltage 20 GS Continuous Drain Current, V 10V I T = 25C 15 A GS D Continuous Drain Current, V 10V I T = 70C 12 D A GS Continuous Drain Current, V 10V I T = 25C 34 A C GS D Pulsed Drain Current I 120 DM Power Dissipation P T = 25C 3.1 W A D Power Dissipation P T = 70C 2.0 D A Linear Derating Factor 0.025 W/C T Operating Junction and -55 to + 150 C J T Storage Temperature Range STG Thermal Resistance Parameter Typ. Max. Units Junction-to-Case R 7.9 C/W JC Junction-to-Ambient R 40 JA Notes through are on page 9 IRFH7921PbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A DSS GS D V /T DSS J Breakdown Voltage Temp. Coefficient 0.02 V/C Reference to 25C, I = 1mA D R DS(on) Static Drain-to-Source On-Resistance 7.1 8.5 V = 10V, I = 15A GS D m 10.4 12.5 V = 4.5V, I = 12A GS D V GS(th) Gate Threshold Voltage 1.35 1.8 2.35 V V = V , I = 25A DS GS D V GS(th) Gate Threshold Voltage Coefficient -6.2 mV/C I Drain-to-Source Leakage Current 1.0 V = 24V, V = 0V DSS DS GS A 150 V = 24V, V = 0V, T = 125C DS GS J I GSS Gate-to-Source Forward Leakage 100 V = 20V GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 27 S V = 15V, I = 12A DS D Q g Total Gate Charge 9.3 14 Q Pre-Vth Gate-to-Source Charge 2.2 V = 15V gs1 DS Q Post-Vth Gate-to-Source Charge 1.2 V = 4.5V gs2 GS nC Q Gate-to-Drain Charge 3.2 I = 12A gd D Q godr Gate Charge Overdrive 2.7 See Fig.17 & 18 Q Switch Charge (Q + Q ) sw gs2 gd 4.4 Q oss Output Charge 5.0 nC V = 16V, V = 0V DS GS R Gate Resistance 1.4 2.4 G t Turn-On Delay Time 12 V = 15V, V = 4.5V d(on) DD GS t Rise Time 7.6 I = 12A r D ns t Turn-Off Delay Time 14 R =1.8 d(off) G t f Fall Time 4.7 See Fig.15 C iss Input Capacitance 1210 V = 0V GS C oss Output Capacitance 240 pF V = 15V DS C Reverse Transfer Capacitance 120 = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E AS 29 mJ Avalanche Current I AR 12 A Diode Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current MOSFET symbol S D 3.9 (Body Diode) showing the A G I SM Pulsed Source Current integral reverse 120 S (Body Diode) p-n junction diode. V SD Diode Forward Voltage 1.0 V T = 25C, I = 12A, V = 0V J S GS t Reverse Recovery Time 12 18 ns T = 25C, I = 12A, V = 15V rr J F DD Q di/dt = 300A/s Reverse Recovery Charge 11 17 nC rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on