IRFH8337PbF HEXFET Power MOSFET V 30 V DS V V GS max 20 R DS(on) max 12.8 ( V = 10V) GS m ( V = 4.5V) GS 19.9 Q 4.7 nC g typ. PQFN 5X6 mm I D 16.2 A ( T = 25C) c(Bottom) Applications Control MOSFET for high frequency buck converters Features and Benefits Features Benefits Low Thermal Resistance to PCB (< 4.7C/W) Enable better thermal dissipation Low Profile (<1.2mm) results in Increased Power Density Industry-Standard Pinout Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier MSL1, Consumer Qualification Increased Reliability Orderable part number Package Type Standard Pack Note Form Quantity IRFH8337TRPBF PQFN 5mm x 6mm Tape and Reel 4000 IRFH8337TR2PBF PQFN 5mm x 6mm Tape and Reel 400 Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 30 DS V V Gate-to-Source Voltage 20 GS Continuous Drain Current, V 10V I T = 25C 12 D A GS I T = 70C Continuous Drain Current, V 10V 9.7 A GS D I T = 25C Continuous Drain Current, V 10V 35 GS D C(Bottom) Continuous Drain Current, V 10V 22 A I T = 100C D C(Bottom) GS Continuous Drain Current, V 10V (Source Bonding GS 16.2 I T = 25C D C Technology Limited) Pulsed Drain Current I 65 DM Power Dissipation P T = 25C 3.2 D A W Power Dissipation P T = 25C 27 C(Bottom) D Linear Derating Factor 0.026 W/C T Operating Junction and -55 to + 150 J C T Storage Temperature Range STG Notes through are on page 9 www.irf.com 1 03/30/12 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V = 0V, I = 250 A BV Drain-to-Source Breakdown Voltage 30 V DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.025 V/C Reference to 25C, I = 1.0mA DSS J D R Static Drain-to-Source On-Resistance 10.3 12.8 V = 10V, I = 16.2A DS(on) GS D m 15.8 19.9 V = 4.5V, I = 13A GS D V Gate Threshold Voltage 1.35 1.8 2.35 V V = V , I = 25 A GS(th) DS GS D V Gate Threshold Voltage Coefficient -6.0 mV/C GS(th) I Drain-to-Source Leakage Current 1.0 A V = 24V, V = 0V DSS DS GS 150 V = 24V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 31 S V = 10V, I = 16.2A DS D Q Total Gate Charge 10 nC V = 10V, V = 15V, I = 16.2A g GS DS D Q Total Gate Charge 4.7 g Q Pre-Vth Gate-to-Source Charge 1.6 V = 15V gs1 DS Q Post-Vth Gate-to-Source Charge 0.7 V = 4.5V gs2 GS nC Q Gate-to-Drain Charge 1.4 I = 16.2A gd D Q Gate Charge Overdrive 1.0 godr Q Switch Charge (Q + Q ) 2.1 sw gs2 gd Q Output Charge 4.2 nC V = 16V, V = 0V oss DS GS R Gate Resistance 1.6 G t Turn-On Delay Time 6.4 V = 15V, V = 4.5V d(on) DD GS t Rise Time 12 I = 16.2A r D ns t Turn-Off Delay Time 5.7 R =1.8 d(off) G t Fall Time 4.1 f C Input Capacitance V = 0V iss 790 GS C pF Output Capacitance 180 V = 10V oss DS C Reverse Transfer Capacitance 69 = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E 28 mJ AS Avalanche Current I 16.2 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions I D Continuous Source Current MOSFET symbol S 16.2 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 65 S p-n junction diode. (Body Diode) V Diode Forward Voltage 1.0 V T = 25C, I = 16.2A, V = 0V SD J S GS t Reverse Recovery Time 12 18 ns T = 25C, I = 16.2A, V = 15V rr DD J F Q Reverse Recovery Charge 17 26 nC di/dt = 390 A/ s rr t Forward Turn-On Time Time is dominated by parasitic Inductance on Thermal Resistance Parameter Typ. Max. Units Junction-to-Case R (Bottom) JC 4.7 Junction-to-Case R (Top) 40 C/W JC Junction-to-Ambient R 39 JA Junction-to-Ambient R (<10s) 26 JA 2 www.irf.com