FastIRFET IRFHM4234TRPbF HEXFET Power MOSFET Top View V 25 V DSS R max DS(on) 4.4 D 5 4 G ( V = 10V) GS m D 6 3 S ( V = 4.5V) 7.1 GS D 7 2 S Qg 8.2 nC (typical) D 8 1 S I D 60 A ( T = 25C) C (Bottom) PQFN 3.3 x 3.3 mm Applications Control MOSFET for synchronous buck converter Features Benefits Low Charge (typical 8.2 nC) Low Switching Losses Low R (<4.4 m) Lower Conduction Losses DSon Low Thermal Resistance to PCB (<4.4C/W) Enable better Thermal Dissipation Low Profile (<0.9 mm) results in Increased Power Density Industry-Standard Pinout Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easie r Manufacturing RoHS Compliant, Halogen-Free Environmentally Friendlier MSL1, Industrial Qualification Increased Reliability Standard Pack Base part number Package Type Orderable Part Number Form Quantity IRFHM4234PbF PQFN 3.3mm x 3.3mm Tape and Reel 4000 IRFHM4234TRPbF Absolute Maximum Ratings Parameter Max. Units V Gate-to-Source Voltage 20 V GS I T = 25C Continuous Drain Current, V 10V 20 D A GS I T = 25C Continuous Drain Current, V 10V 63 D C(Bottom) GS I T = 100C Continuous Drain Current, V 10V 44 D C(Bottom) GS A Continuous Drain Current, V 10V GS I T = 25C 60 D C (Source Bonding Technology Limited) I Pulsed Drain Current 270 DM P T = 25C Power Dissipation 2.8 W D A P T = 25C Power Dissipation 28 D C(Bottom) Linear Derating Factor 0.022 W/C T Operating Junction and -55 to + 150 J C T Storage Temperature Range STG Notes through are on page 9 1 2016-2-26 IRFHM4234TRPbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 25 V V = 0V, I = 250A DSS GS D Breakdown Voltage Temp. Coefficient 21 mV/C Reference to 25C, I = 1mA BV / T D DSS J R Static Drain-to-Source On-Resistance 3.5 4.4 V = 10V, I = 30A DS(on) GS D m 5.6 7.1 V = 4.5V, I = 30A GS D V Gate Threshold Voltage 1.1 1.6 2.1 V GS(th) V = V , I = 25A DS GS D Gate Threshold Voltage Coefficient -5.5 mV/C V GS(th) I Drain-to-Source Leakage Current 1.0 A V = 20V, V = 0V DSS DS GS I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 60 S V = 5.0V, I = 30A DS D Q Total Gate Charge 17 nC V = 10V, V = 13V, I = 30A g GS DS D Q Total Gate Charge 8.2 12.3 g Q Pre-Vth Gate-to-Source Charge 1.6 V = 13V gs1 DS Q Post-Vth Gate-to-Source Charge 1.6 nC V = 4.5V gs2 GS Q Gate-to-Drain Charge 3.1 I = 30A gd D Q Gate Charge Overdrive 1.9 godr Q Switch Charge (Q + Q) 4.7 sw gs2 gd Q Output Charge 7.7 nC V = 16V, V = 0V oss DS GS R Gate Resistance 1.8 G t Turn-On Delay Time 7.8 V = 13V, V = 4.5V d(on) DD GS t Rise Time 30 ns I = 30A r D t Turn-Off Delay Time 8.0 R =1.8 d(off) G t Fall Time 5.3 f C Input Capacitance 1011 V = 0V iss GS C Output Capacitance 286 pF V = 13V DS oss = 1.0MHz C Reverse Transfer Capacitance 83 rss Avalanche Characteristics Parameter Typ. Max. E Single Pulse Avalanche Energy 39 AS I Avalanche Current 30 AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current MOSFET symbol D S 60 (Body Diode) showing the A G integral reverse I Pulsed Source Current SM 270 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.0 V T = 25C, I = 30A, V = 0V SD J S GS t Reverse Recovery Time 10 15 ns T = 25C, I = 30A, V = 13V rr J F DD Q Reverse Recovery Charge 11 17 nC di/dt = 200A/s rr Thermal Resistance Parameter Typ. Max. Units Junction-to-Case 4.4 R (Bottom) JC C/W R (Top) Junction-to-Case 40 JC R Junction-to-Ambient 45 JA R (<10s) Junction-to-Ambient 31 JA 2 2016-2-26