IRFI4410ZGPbF HEXFET Power MOSFET Applications V 100V DSS High Efficiency Synchronous Rectification in SMPS R typ. 7.9m DS(on) Uninterruptible Power Supply High Speed Power Switching max. 9.3m Hard Switched and High Frequency Circuits I 43A D Benefits D D Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA S G Enhanced body diode dV/dt and dI/dt Capability D G Lead-Free S Halogen-Free TO-220AB Full-Pak GD S Gate Drain Source Absolute Maximum Ratings Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 43 A D C GS I T = 100C Continuous Drain Current, V 10V 30 D C GS I Pulsed Drain Current 170 DM P T = 25C 47 Maximum Power Dissipation W D C 0.3 Linear Derating Factor W/C V 30 Gate-to-Source Voltage V GS Single Pulse Avalanche Energy E 310 mJ AS (Thermally limited) T -55 to + 175 Operating Junction and C J T Storage Temperature Range STG Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting torque, 6-32 or M3 screw 10lb in (1.1N m) Thermal Resistance Parameter Typ. Max. Units Junction-to-Case R 3.2 C/W JC Junction-to-Ambient R 65 JA www.irf.com 1 05/18/11 Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V = 0V, I = 250 A V Drain-to-Source Breakdown Voltage 100 V (BR)DSS GS D Reference to 25C, I = 5mA V /T Breakdown Voltage Temp. Coefficient 95 mV/C (BR)DSS J D R Static Drain-to-Source On-Resistance 7.9 9.3 m V = 10V, I = 26A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 150A DS GS D GS(th) V = 100V, V = 0V I Drain-to-Source Leakage Current 20 A DSS DS GS V = 100V, V = 0V, T = 125C 250 DS GS J I Gate-to-Source Forward Leakage 100 nA = 20V V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS R Internal Gate Resistance 0.9 G(int) Dynamic T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V = 50V, I = 26A gfs Forward Transconductance 80 S DS D Q Total Gate Charge 81 110 nC I = 26A g D Q Gate-to-Source Charge 18 V = 50V gs DS Q Gate-to-Drain Mille) Charge 23 V = 10V gd GS V = 65V t Turn-On Delay Time 15 ns d(on) DD I = 26A t Rise Time 27 r D t Turn-Off Delay Time 43 R = 2.7 d(off) G t Fall Time 30 V = 10V GS f C Input Capacitance 4910 pF V = 0V iss GS V = 50V C Output Capacitance 330 oss DS C Reverse Transfer Capacitance = 1.0MHz 150 rss C eff. (ER) 420 V = 0V, V = 0V to 80V , See Fig.11 Effective Output Capacitance (Energy Related) oss GS DS V = 0V, V = 0V to 80V C eff. (TR) Effective Output Capacitance (Time Related) 680 oss GS DS Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current A MOSFET symbol 43 S (Body Diode) showing the G I Pulsed Source Current 170 A integral reverse SM (Body Diode) p-n junction diode. S V Diode Forward Voltage 1.3 V T = 25C, I = 26A, V = 0V SD J S GS t Reverse Recovery Time 47 71 ns T = 25C V = 85V, rr J R 54 81 T = 125C I = 26A J F di/dt = 100A/ s Q Reverse Recovery Charge 110 160 nC T = 25C rr J 140 210 T = 125C J I Reverse Recovery Current 2.5 A T = 25C RRM J t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Repetitive rating pulse width limited by max. junction Pulse width 400s duty cycle 2%. temperature. Limited by T , starting T = 25C, L = 0.91mH C eff. (TR) is a fixed capacitance that gives the same charging time Jmax J oss R = 25, I = 26A, V =10V. Part not recommended for use G AS GS as C while V is rising from 0 to 80% V . oss DS DSS above this value. C eff. (ER) is a fixed capacitance that gives the same energy as oss C while V is rising from 0 to 80% V . oss DS DSS 2 www.irf.com