PD-90711C IRFMG50 POWER MOSFET 1000V, N-CHANNEL THRU-HOLE (TO-254AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFMG50 2.0 5.6A HEXFET MOSFET technology is the key to International Rectifiers advanced line of power MOSFET transistors. TO-254AA The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established Features: advantages of MOSFETs, such as voltage control, very Simple Drive Requirements fast switching, ease of paralleling and electrical parameter Ease of Paralleling temperature stability. They are well-suited for applications Hermetically Sealed such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse Electrically Isolated circuits, and virtually any application where high reliability Ceramic Eyelets is required. The HEXFET transistors totally isolated package eliminates the need for additional isolating material between the device and the heatsink. This improves thermal efficiency and reduces drain capacitance. Absolute Maximum Ratings Parameter Units I V = 10V, T = 25C Continuous Drain Current 5.6 D GS C A I V = 10V, T = 100C Continuous Drain Current 3.5 D GS C I Pulsed Drain Current 22.4 DM P T = 25C Max. Power Dissipation 150 W D C Linear Derating Factor 1.2 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy 860 mJ AS I Avalanche Current 5.6 A AR E Repetitive Avalanche Energy 15 mJ AR dv/dt Peak Diode Recovery dv/dt 1.0 V/ns T Operating Junction -55 to 150 J T Storage Temperature Range C STG Lead Temperature 300(0.063in./1.6mm from case for 10 sec) Weight 9.3 (Typical) g For footnotes refer to the last page www.irf.com 1 IRFMG50 Electrical Characteristics Tj = 25C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BV Drain-to-Source Breakdown Voltage 1000 V V = 0V, I = 1.0mA DSS GS D BV /T Temperature Coefficient of Breakdown 1.4 V/C Reference to 25C, I = 1.0mA DSS J D Voltage R Static Drain-to-Source On-State 2.0 V = 10V, I = 3.5A DS(on) GS D Resistance V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D g Forward Transconductance 5.2 S V > 15V, I = 3.5A fs DS DS I Zero Gate Voltage Drain Current 25 V = 800V ,V =0V DSS DS GS A 250 V = 800V, DS V = 0V, T = 125C GS J I Gate-to-Source Leakage Forward 100 V = 20V GSS GS nA I Gate-to-Source Leakage Reverse -100 V = -20V GSS GS Q Total Gate Charge 200 V =10V, I = 5.6A g GS D Q Gate-to-Source Charge 20 nC V = 400V gs DS Q Gate-to-Drain (Miller) Charge 110 gd t Turn-On Delay Time 30 V = 400V, I = 5.6A, d(on) DD D t Rise Time 44 V =10V, R = r GS G ns t Turn-Off Delay Time 210 d(off) t Fall Time 60 f L + L Total Inductance 6.8 Measured from Drain lead (6mm/ S D nH 0.25in.) to Source lead (6mm /0.25in.) from package C Input Capacitance 2400 V = 0V, V = 25V iss GS DS C Output Capacitance 240 pF f = 1.0MHz oss C Reverse Transfer Capacitance 80 rss Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions I Continuous Source Current (Body Diode) 5.6 S A I Pulse Source Current (Body Diode) 22.4 SM V Diode Forward Voltage 1.8 V Tj = 25C, I = 5.6A, V = 0V SD S GS t Reverse Recovery Time 1200 ns T = 25C, I = 5.6A, di/dt 100A/s rr j F Q Reverse Recovery Charge 8.4 C V 50V RR DD t Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L . on S D Thermal Resistance Parameter Min Typ Max Units Test Conditions R Junction-to-Case 0.83 thJC C/W R Case-to-sink 0.21 thCS R Junction-to-Ambient 48 Typical socket mount thJA Note: Corresponding Spice and Saber models are available on International Rectifier Website. For footnotes refer to the last page 2 www.irf.com