IRFP4004PbF Applications High Efficiency Synchronous Rectification in HEXFET Power MOSFET SMPS Uninterruptible Power Supply D V 40V DSS High Speed Power Switching R typ. 1.35m DS(on) Hard Switched and High Frequency Circuits max. 1.70m G I D (Silicon Limited) 350A S I 195A Benefits D (Package Limited) Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and D Avalanche SOA Enhanced body diode dV/dt and dI/dt S Capability D G TO-247AC GD S Gate Drain Source Absolute Maximum Ratings Symbol Parameter Max. Units I T = 25C Continuous Drain Current, VGS 10V (Silicon Limited) 350 D C I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 250 A D C GS I T = 25C Continuous Drain Current, V 10V (Wire Bond Limited) 195 D C GS I Pulsed Drain Current 1390 DM P T = 25C 380 W D C Maximum Power Dissipation 2.5 Linear Derating Factor W/C V Gate-to-Source Voltage 20 V GS 2.0 dv/dt Peak Diode Recovery V/ns T -55 to + 175 C J Operating Junction and T Storage Temperature Range STG Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting torque, 6-32 or M3 screw 10lb in (1.1N m) Avalanche Characteristics Single Pulse Avalanche Energy E 290 mJ AS (Thermally limited) Avalanche Current I See Fig. 14, 15, 22a, 22b A AR Repetitive Avalanche Energy E mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 0.40 JC R Case-to-Sink, Flat Greased Surface 0.24 C/W CS R 40 JA Junction-to-Ambient www.irf.com 1 06/05/08 Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 40 V V = 0V, I = 250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.035 V/C Reference to 25C, I = 5mA (BR)DSS J D R Static Drain-to-Source On-Resistance 1.35 1.70 V = 10V, I = 195A DS(on) m GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D I Drain-to-Source Leakage Current 20 A V = 40V, V = 0V DSS DS GS 250 V = 40V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 200 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -200 V = -20V GS Dynamic T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 290 S V = 10V, I = 195A DS D Q Total Gate Charge 220 330 nC I = 195A g D Q Gate-to-Source Charge 59 V = 20V gs DS Q Gate-to-Drain Mille) Charge 75 V = 10V gd GS Q Total Gate Charge Sync. (Q - Q ) 145 I = 195A, V =0V, V = 10V sync g gd D DS GS R Internal Gate Resistance 6.8 G(int) t Turn-On Delay Time 59 ns V = 20V d(on) DD t Rise Time 370 I = 195A r D t Turn-Off Delay Time 160 R = 2.7 d(off) G t Fall Time 190 V = 10V f GS C Input Capacitance 8920 pF V = 0V iss GS C Output Capacitance 2360 V = 25V oss DS C Reverse Transfer Capacitance 930 = 1.0MHz rss C eff. (ER) 2860 V = 0V, V = 0V to 32V oss Effective Output Capacitance (Energy Related) GS DS C eff. (TR) 3110 V = 0V, V = 0V to 32V oss Effective Output Capacitance (Time Related) GS DS Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I Continuous Source Current A MOSFET symbol D S 350 (Body Diode) showing the G I Pulsed Source Current 1390 integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 195A, V = 0V SD J S GS t Reverse Recovery Time 83 130 ns T = 25C V = 20V, rr J R T = 125C I = 195A 78 120 J F di/dt = 100A/s Q T = 25C Reverse Recovery Charge 190 290 nC rr J T = 125C 210 320 J I T = 25C Reverse Recovery Current 4.0 A RRM J t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Calculated continuous current based on maximum allowable junction I 195A, di/dt 690A/s, V V , T 175C. SD DD (BR)DSS J temperature. Bond wire current limit is 195A. Note that current Pulse width 400s duty cycle 2%. limitations arising from heating of the device leads may occur with C eff. (TR) is a fixed capacitance that gives the same charging time oss some lead mounting arrangements. Refer to App Notes (AN-1140). as C while V is rising from 0 to 80% V . oss DS DSS Repetitive rating pulse width limited by max. junction C eff. (ER) is a fixed capacitance that gives the same energy as oss temperature. C while V is rising from 0 to 80% V . oss DS DSS Limited by T , starting T = 25C, L = 0.015mH Jmax J When mounted on 1 square PCB (FR-4 or G-10 Material). For recom mended footprint and soldering techniques refer to application note AN-994. R = 25 , I = 195A, V =10V. Part not recommended for use GS G AS R is measured at T approximately 90C. J above this value. 2 www.irf.com