Applications HEXFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications D V 40V DSS Battery powered circuits R typ. 1.0m DS(on) Half-bridge and full-bridge topologies max. 1.3m Synchronous rectifier applications G Resonant mode power supplies I 404A D (Silicon Limited) OR-ing and redundant power switches S I 195A D DC/DC and AC/DC converters (Package Limited) DC/AC Inverters D Benefits Improved Gate, Avalanche and Dynamic dV/dt S D Ruggedness G Fully Characterized Capacitance and Avalanche SOA TO-247AC Enhanced body diode dV/dt and dI/dt Capability IRFP7430PbF Lead-Free GD S RoHS Compliant, Halogen-Free* Gate Drain Source Ordering Information Standard Pack Base Part Number Package Type Complete Part Number Form Quantity IRFP7430PbF TO-247 Tube 50 IRFP7430PbF 6.0 500 I = 100A D Limited By Package 400 4.0 300 T = 125C J 200 2.0 100 T = 25C J 0.0 0 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150 175 T , Case Temperature (C) V Gate -to -Source Voltage (V) C GS, Fig 2. Maximum Drain Current vs. Case Temperature Fig 1. Typical On-Resistance vs. Gate Voltage R , Drain-to -Source On Resistance (m ) DS(on) I , Drain Current (A) D Absolute Maximum Ratings Symbol Parameter Max. Units 404 I T = 25C Continuous Drain Current, V 10V (Silicon Limited) D C GS 286 I T = 100C Continuous Drain Current, V 10V (Silicon Limited) D C GS A 195 I T = 25C Continuous Drain Current, V 10V (Wire Bond Limited) D C GS Pulsed Drain Current 1524 I DM P T = 25C Maximum Power Dissipation 366 W D C Linear Derating Factor 2.4 W/C Gate-to-Source Voltage 20 V V GS Operating Junction and -55 to + 175 T J Storage Temperature Range C T STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Mounting torque, 6-32 or M3 screw 10lbf in (1.1N m) Avalanche Characteristics Single Pulse Avalanche Energy E 722 mJ AS (Thermally limited) Single Pulse Avalanche Energy E 1405 AS (Thermally limited) I Avalanche Current See Fig. 14, 15, 22a, 22b A AR Repetitive Avalanche Energy E mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case 0.41 R JC Case-to-Sink, Flat Greased Surface C/W R 0.24 CS Junction-to-Ambient R 40 JA Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 40 V V = 0V, I = 250 A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.014 V/C Reference to 25C, I = 1.0mA (BR)DSS J D m R Static Drain-to-Source On-Resistance 1.0 1.3 V = 10V, I = 100A DS(on) GS D 1.2 m = 6.0V, I = 50A V GS D V Gate Threshold Voltage 2.2 3.9 V V = V , I = 250A GS(th) DS GS D I Drain-to-Source Leakage Current 1.0 A V = 40V, V = 0V DSS DS GS 150 V = 40V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS R Internal Gate Resistance 2.1 G Calculated continuous current based on maximum allowable junction Pulse width 400 s duty cycle 2%. temperature. Bond wire current limit is 195A. Note that current C eff. (TR) is a fixed capacitance that gives the same charging time oss limitations arising from heating of the device leads may occur with as C while V is rising from 0 to 80% V . oss DS DSS some lead mounting arrangements. C eff. (ER) is a fixed capacitance that gives the same energy as oss Repetitive rating pulse width limited by max. junction C while V is rising from 0 to 80% V . oss DS DSS temperature. When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended Limited by T , starting T = 25C, L = 0.14mH footprint and soldering techniques refer to application note AN-994. Jmax J R = 50, I = 100A, V =10V. GS G AS I 100A, di/dt 990A/s, V V , T 175C. Limited by T , starting T = 25C, L= 1mH, R = 50, I = 53A, Jmax J G AS SD DD (BR)DSS J V =10V. GS Halogen -Free since April 30, 2014