IR MOSFET StrongIRFET IRFP7718PbF Application HEXFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications V 75V D DSS Battery powered circuits Half-bridge and full-bridge topologies R 1.45m DS(on) typ. Synchronous rectifier applications G 1.80m max Resonant mode power supplies I 355A OR-ing and redundant power switches D (Silicon Limited) S DC/DC and AC/DC converters I 195A D (Package Limited) DC/AC Inverters D Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness S D Fully Characterized Capacitance and Avalanche SOA G Enhanced body diode dV/dt and dI/dt Capability TO-247AC Lead-Free, RoHS Compliant G D S Gate Drain Source Standard Pack Orderable Part Number Base part number Package Type Form Quantity IRFP7718PbF TO-247 Tube 25 IRFP7718PbF 400 6 I = 100A D Limited By Package 300 4 200 T = 125C J 2 100 T = 25C J 0 0 4 8 12 16 20 25 50 75 100 125 150 175 V , Gate-to-Source Voltage (V) GS T , Case Temperature (C) C Fig 2. Maximum Drain Current vs. Case Temperature Fig 1. Typical On-Resistance vs. Gate Voltage 1 2015-11-30 R (on), Drain-to -Source On Resistance m( ) DS I , Drain Current (A) D IRFP7718PbF Absolute Maximium Rating Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 355 D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 250 D C GS A I T = 25C Continuous Drain Current, V 10V (Wire Bond Limited) 195 D C GS I Pulsed Drain Current 1590 DM P T = 25C Maximum Power Dissipation 517 W D C Linear Derating Factor 3.5 W/C V Gate-to-Source Voltage 20 V GS T Operating Junction and J -55 to + 175 T Storage Temperature Range STG C Soldering Temperature, for 10 seconds (1.6mm from case) 300 Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Avalanche Characteristics E 1160 Single Pulse Avalanche Energy AS (Thermally limited) mJ E Single Pulse Avalanche Energy 2004 AS (Thermally limited) I Avalanche Current A AR See Fig 14, 15, 23a, 23b E Repetitive Avalanche Energy mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 0.29 JC Case-to-Sink, Flat Greased Surface R 0.24 C/W CS Junction-to-Ambient R 40 JA Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 75 V V = 0V, I = 250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 42 mV/C Reference to 25C, I = 2mA D (BR)DSS J R Static Drain-to-Source On-Resistance 1.45 1.80 V = 10V, I = 100A GS D DS(on) m 1.60 V = 6V, I = 50A GS D V Gate Threshold Voltage 2.1 3.7 V V = V , I = 250A GS(th) DS GS D 1.0 V =75 V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 150 V =75V,V = 0V,T =125C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS R Gate Resistance 0.9 G Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140) Repetitive rating pulse width limited by max. junction temperature. Limited by T , starting T = 25C, L = 233H, R = 50, I = 100A, V =10V. Jmax J G AS GS I 100A, di/dt 1279A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 400s duty cycle 2%. C eff. (TR) is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss oss DS DSS C eff. (ER) is a fixed capacitance that gives the same energy as C while V is rising from 0 to 80% V . oss oss DS DSS R is measured at T approximately 90C. J Limited by T , starting T = 25C, L = 1mH, R = 50 , I = 63A, V =10V Jmax J G AS GS Pulse drain current is limited at 780A by source bonding technology. 2 2015-11-30