IRFR3518PbF IRFU3518PbF HEXFET Power MOSFET Applications High frequency DC-DC converters V R max I DSS DS(on) D Lead-Free 80V 29m 30A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective C to Simplify Design, (See OSS App. Note AN1001) Fully Characterized Avalanche Voltage D-Pak I-Pak and Current IRFR3518 IRFU3518 Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 80 V DS V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V 38 D C GS I T = 100C Continuous Drain Current, V 10V 27 A D C GS I Pulsed Drain Current 150 DM P T = 25C Power Dissipation 110 W D C Linear Derating Factor 0.71 W/C dv/dt Peak Diode Recovery dv/dt 5.2 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range STG C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 1.4 JC R Junction-to-Ambient (PCB mount) 40 C/W JA R Junction-to-Ambient 110 JA Notes through are on page 10 www.irf.com 1 12/03/04 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 80 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.09 V/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 24 29 m V = 10V, I = 18A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D 20 V = 80V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 64V, V = 0V, T = 150C DS GS J Gate-to-Source Forward Leakage 200 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -200 V = -20V GS Dynamic T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions g Forward Transconductance 34 S V = 25V, I = 18A fs DS D Q Total Gate Charge 37 56 I = 18A g D Q Gate-to-Source Charge 11 nC V = 40V gs DS Q Gate-to-Drain Mille) Charge 12 V = 10V gd GS t Turn-On Delay Time 12 V = 40V d(on) DD t Rise Time 25 I = 18A r D ns t Turn-Off Delay Time 37 R = 9.1 d(off) G t Fall Time 13 V = 10V f GS C Input Capacitance 1710 V = 0V iss GS C Output Capacitance 270 V = 25V oss DS C Reverse Transfer Capacitance 33 pF = 1.0MHz rss C Output Capacitance 1780 V = 0V, V = 1.0V, = 1.0MHz oss GS DS C Output Capacitance 170 V = 0V, V = 64V, = 1.0MHz oss GS DS C eff. Effective Output Capacitance 330 V = 0V, V = 0V to 64V oss GS DS Avalanche Characteristics Parameter Typ. Max. Units E Single Pulse Avalanche Energy 160 mJ AS I Avalanche Current 18 A AR E Repetitive Avalanche Energy 11 mJ AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 38 (Body Diode) showing the G I Pulsed Source Current integral reverse SM 150 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 18A, V = 0V SD J S GS t Reverse Recovery Time 77 ns T = 25C, I = 18A rr J F Q Reverse RecoveryCharge 210 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D 2 www.irf.com