X-On Electronics has gained recognition as a prominent supplier of IRFR3704ZPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRFR3704ZPBF MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRFR3704ZPBF Infineon

IRFR3704ZPBF electronic component of Infineon
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See Product Specifications
Part No.IRFR3704ZPBF
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET 20V 1 N-CH HEXFET 8.4mOhms 9.3nC
Datasheet: IRFR3704ZPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.6277 ea
Line Total: USD 0.63 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 1
Multiples : 1
1 : USD 0.6277
10 : USD 0.6217
125 : USD 0.5613
750 : USD 0.4467
1500 : USD 0.4225
2500 : USD 0.4165

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Qg - Gate Charge
Channel Mode
Configuration
Brand
Forward Transconductance - Min
Ciss - Input Capacitance
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IRFR3704ZPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRFR3704ZPBF and other electronic components in the MOSFETs category and beyond.

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IRFR3704ZPbF IRFU3704ZPbF Applications HEXFET Power MOSFET High Frequency Synchronous Buck Converters for Computer Processor Power V R max Qg DSS DS(on) High Frequency Isolated DC-DC Converters with Synchronous Rectification 20V 8.4m 9.3nC for Telecom and Industrial Use Lead-Free Benefits Very Low R at 4.5V V DS(on) GS Ultra-Low Gate Impedance D-Pak I-Pak Fully Characterized Avalanche Voltage IRFR3704Z IRFU3704Z and Current Absolute Maximum Ratings Parameter Max. Units V DS Drain-to-Source Voltage 20 V V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V 60 A D C GS I T = 100C Continuous Drain Current, V 10V 42 D C GS I 240 DM Pulsed Drain Current P T = 25C 48 W D C Maximum Power Dissipation P T = 100C 24 C Maximum Power Dissipation D 0.32 Linear Derating Factor W/C T C Operating Junction and -55 to + 175 J T Storage Temperature Range STG Soldering Temperature, for 10 seconds 300 (1.6mm from case) Thermal Resistance Parameter Typ. Max. Units R 3.1 C/W JC Junction-to-Case R Junction-to-Ambient (PCB Mount) 50 JA R 110 JA Junction-to-Ambient Notes through are on page 11 www.irf.com 1 12/03/04 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 20 V V = 0V, I = 250A DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.015 V/C Reference to 25C, I = 1mA DSS J D R m DS(on) Static Drain-to-Source On-Resistance 6.7 8.4 V = 10V, I = 15A GS D 9.2 11.4 V = 4.5V, I = 12A GS D V GS(th) Gate Threshold Voltage 1.65 2.1 2.55 V V = V , I = 250A DS GS D V /T Gate Threshold Voltage Coefficient -5.5 mV/C GS(th) J I Drain-to-Source Leakage Current 1.0 A V =16V, V = 0V DSS DS GS 150 V = 16V, V = 0V, T = 125C DS GS J I GSS Gate-to-Source Forward Leakage 100 nA V = 20V GS Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 41 S V = 10V, I = 12A DS D Q Total Gate Charge 9.3 14 g Q Pre-Vth Gate-to-Source Charge 3.0 V = 10V gs1 DS Q Post-Vth Gate-to-Source Charge 1.1 nC V = 4.5V gs2 GS Q gd Gate-to-Drain Charge 2.7 I = 12A D Q godr Gate Charge Overdrive 2.5 See Fig. 16 Q Switch Charge (Q + Q ) sw gs2 gd 3.8 Q oss Output Charge 5.6 nC V = 10V, V = 0V DS GS t Turn-On Delay Time 41 V = 10V, V = 4.5V d(on) DD GS t Rise Time 8.9 I = 12A r D t d(off) Turn-Off Delay Time 4.9 ns Clamped Inductive Load t f Fall Time 12 C iss Input Capacitance 1190 V = 0V GS C oss Output Capacitance 380 pF V = 10V DS C rss Reverse Transfer Capacitance 170 = 1.0MHz Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E AS 41 mJ Avalanche Current I AR 12 A Repetitive Avalanche Energy E AR 4.8 mJ Diode Characteristics Parameter Min. Typ. Max. Units Conditions 60 I S MOSFET symbol D Continuous Source Current (Body Diode) A showing the G I SM 240 integral reverse Pulsed Source Current S (Body Diode) p-n junction diode. V SD Diode Forward Voltage 1.0 V T = 25C, I = 12A, V = 0V J S GS t 1319ns T = 25C, I = 12A, V = 10V rr Reverse Recovery Time J F DD Q di/dt = 100A/s rr 4.2 6.3 nC Reverse Recovery Charge t on Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Forward Turn-On Time 2 www.irf.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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