HEXFET Power MOSFET D V 150V DSS Applications High Efficiency Synchronous Rectification in SMPS R typ. 34m DS(on) Uninterruptible Power Supply G max. 42m High Speed Power Switching Hard Switched and High Frequency Circuits I 33A D S D D Benefits Improved Gate, Avalanche and Dynamic dV/dt S S D Ruggedness G G Fully Characterized Capacitance and Avalanche DPak IPAK SOA IRFR4615PbF IRFU4615PbF Enhanced body diode dV/dt and dI/dt Capability Lead-Free GD S Gate Drain Source Standard Pack Orderable Part Number Base Part Number Package Type Form Quantity IRFR4615PbF Tube/Bulk 75 IRFR4615PbF D-PAK IRFR4615TRLPbF Tape and Reel Left 3000 IRFR4615TRLPbF IRFU4615PbF I-PAK Tube/Bulk 75 IRFU4615PbF Absolute Maximum Ratings Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 33 D C GS I T = 100C Continuous Drain Current, V 10V 24 A D C GS I 140 Pulsed Drain Current DM P T = 25C Maximum Power Dissipation 144 W D C 0.96 Linear Derating Factor W/C V V Gate-to-Source Voltage 20 GS 38 dv/dt Peak Diode Recovery V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range STG C 300 Soldering Temperature, for 10 seconds (1.6mm from case) Avalanche Characteristics Single Pulse Avalanche Energy E 109 mJ AS (Thermally limited) Avalanche Current I See Fig. 14, 15, 22a, 22b, A AR Repetitive Avalanche Energy E mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units R JC Junction-to-Case 1.045 R Junction-to-Ambient (PCB Mount) 50 C/W JA R 110 JA Junction-to-Ambient Notes through are on page 11 Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 150 V V = 0V, I = 250 A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.19 V/C Reference to 25C, I = 5mA (BR)DSS J D R Static Drain-to-Source On-Resistance 34 42 V = 10V, I = 21A DS(on) m GS D V Gate Threshold Voltage 3.0 5.0 V V = V , I = 100 A GS(th) DS GS D I Drain-to-Source Leakage Current 20 V = 150V, V = 0V DSS DS GS A 250 V = 150V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS R Internal Gate Resistance 2.7 G(int) Dynamic T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 35 S V = 50V, I = 21A DS D Q Total Gate Charge 26 I = 21A g D Q Gate-to-Source Charge 8.6 V = 75V gs DS nC Q Gate-to-Drain Mille) Charge 9.0 V = 10V gd GS Q Total Gate Charge Sync. (Q - Q ) 17 I = 21A, V =0V, V = 10V sync g gd D DS GS t Turn-On Delay Time 15 V = 98V d(on) DD t Rise Time 35 I = 21A r D ns t Turn-Off Delay Time 25 R = 7.3 d(off) G t Fall Time 20 V = 10V f GS C Input Capacitance 1750 V = 0V iss GS C Output Capacitance 155 V = 50V oss DS C Reverse Transfer Capacitance 40 pF = 1.0MHz (See Fig.5) rss C eff. (ER) 179 V = 0V, V = 0V to 120V (See Fig.11) Effective Output Capacitance (Energy Related) oss GS DS C eff. (TR) 382 V = 0V, V = 0V to 120V oss Effective Output Capacitance (Time Related) GS DS Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 33 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 140 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 21A, V = 0V SD J S GS t T = 25C V = 100V, Reverse Recovery Time 70 rr J R ns T = 125C I = 21A 83 J F di/dt = 100A/ s Q T = 25C Reverse Recovery Charge 177 rr J nC 247 T = 125C J I T = 25C Reverse Recovery Current 4.9 A RRM J t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on