HEXFET Power MOSFET Applications D V 75V DSS High Efficiency Synchronous Rectification in SMPS R typ. 2.1m DS(on) Uninterruptible Power Supply max. 2.6m High Speed Power Switching G Hard Switched and High Frequency Circuits I 260A D S I 240A D (Package Limited) Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Lead-Free GD S Gate Drain Source Absolute Maximum Ratings Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 260 D C GS I T = 100C Continuous Drain Current, V 10V 190 A D C GS I T = 25C Continuous Drain Current, V 10V (Package Limited) 240 D C GS I 1060 DM Pulsed Drain Current P T = 25C 370 W D C Maximum Power Dissipation Linear Derating Factor 2.5 W/C V Gate-to-Source Voltage 20 V GS 13 dv/dt Peak Diode Recovery V/ns T Operating Junction and -55 to + 175 C J T STG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting torque, 6-32 or M3 screw 10lb in (1.1N m) Avalanche Characteristics Single Pulse Avalanche Energy E 320 mJ AS (Thermally limited) Avalanche Current I See Fig. 14, 15, 22a, 22b, A AR Repetitive Avalanche Energy E mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units R C/W Junction-to-Case 0.40 JC R 40 JA Junction-to-Ambient (PCB Mount) Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 75 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.083 V/C Reference to 25C, I = 5mA (BR)DSS J D R Static Drain-to-Source On-Resistance 2.1 2.6 V = 10V, I = 160A DS(on) m GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D I Drain-to-Source Leakage Current 20 A V = 75V, V = 0V DSS DS GS 250 V = 75V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS R Internal Gate Resistance 2.1 G(int) Dynamic T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 260 S V = 25V, I = 160A DS D Q Total Gate Charge 160 240 nC I = 160A g D Q Gate-to-Source Charge 38 V = 38V gs DS Q Gate-to-Drain Mille) Charge 57 V = 10V gd GS Q Total Gate Charge Sync. (Q - Q ) 103 I = 160A, V =0V, V = 10V sync g gd D DS GS t Turn-On Delay Time 17 ns V = 49V d(on) DD t Rise Time 80 I = 160A r D t Turn-Off Delay Time 100 R = 2.7 d(off) G t Fall Time 64 V = 10V f GS C Input Capacitance 9200 V = 0V iss GS C Output Capacitance 850 V = 50V oss DS C Reverse Transfer Capacitance 400 pF = 1.0MHz rss C eff. (ER) 1150 V = 0V, V = 0V to 60V oss Effective Output Capacitance (Energy Related) GS DS C eff. (TR) 1500 V = 0V, V = 0V to 60V oss Effective Output Capacitance (Time Related) GS DS Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I D Continuous Source Current A MOSFET symbol S 260 (Body Diode) showing the G I Pulsed Source Current 1060 integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 160A, V = 0V SD J S GS t T = 25C V = 64V, Reverse Recovery Time 52 ns rr J R 63 T = 125C I = 160A J F di/dt = 100A/s Q T = 25C Reverse Recovery Charge 110 nC rr J T = 125C 160 J I Reverse Recovery Current 3.8 A T = 25C RRM J t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Repetitive rating pulse width limited by max. junction C eff. (TR) is a fixed capacitance that gives the same charging time oss temperature. as C while V is rising from 0 to 80% V . oss DS DSS Limited by T , starting T = 25C, L = 0.026mH Jmax J C eff. (ER) is a fixed capacitance that gives the same energy as oss R = 25, I = 160A, V =10V. Part not recommended for use G AS GS C while V is rising from 0 to 80% V . oss DS DSS above this value . When mounted on 1 square PCB (FR-4 or G-10 Material). For recom I 160A, di/dt 1420A/s, V V , T 175C. mended footprint and soldering techniques refer to application note AN-994. SD DD (BR)DSS J Pulse width 400s duty cycle 2%. JC